NPN General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
Collector-Emitter Sustaining Voltage*
IC = 1.0 mA, IB = 0
I = 100 A, I = 0
160
180
6.0
V
V
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
µ
C
E
V
I = 10 A, I = 0
µ
E
C
VCB = 120 V, IE = 0,
CB = 120 V, IE = 0, T = 100 C
50
50
50
nA
A
µ
nA
V
°
A
IEBO
Emitter Cutoff Current
VEB = 4.0 V, IC = 0
ON CHARACTERISTICS
hFE
DC Current Gain
IC = 1.0 mA, VCE = 5.0 V
IC = 10 mA, VCE = 5.0 V
IC = 50 mA, VCE = 5.0 V
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
80
80
30
250
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
0.15
0.20
1.0
V
V
V
V
VCE(sat)
VBE(sat)
1.0
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
IC = 10 mA, VCE = 10 V,
f = 100 MHz
VCB = 10 V, IE = 0,
f = 1.0 MHz
VBE = 0.5 V, IC = 0,
f = 1.0 MHz
IC = 1.0 mA, VCE = 10 V,
f = 1.0 kHz
100
50
300
6.0
20
MHz
pF
Output Capacitance
Cobo
Cibo
hfe
Input Capacitance
pF
Small-Signal Current Gain
Noise Figure
250
8.0
NF
dB
I = 250 A, VCE = 5.0 V,
µ
C
R =1.0 k , f=10 Hz to 15.7 kHz
Ω
S
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Spice Model
NPN (Is=2.511f Xti=3 Eg=1.11 Vaf=100 Bf=242.6 Ne=1.249 Ise=2.511f Ikf=.3458 Xtb=1.5 Br=3.197 Nc=2
Isc=0 Ikr=0 Rc=1 Cjc=4.883p Mjc=.3047 Vjc=.75 Fc=.5 Cje=18.79p Mje=.3416 Vje=.75 Tr=1.202n Tf=560p
Itf=50m Vtf=5 Xtf=8 Rb=10)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
