2N5401 / MMBT5401
PNP General Purpose Amplifier
(continued)
Typical Characteristics
vs Collector Current
200
V
CESAT
- COLLECTOR-EMITTER VOLTAGE (V)
Typical Pulsed Current Gain
- TYPICAL PULSED CURRENT GAIN
Collector-Emitter Saturation
Voltage vs Collector Current
0.4
β
= 10
V
CE
= 5V
150
125 °C
25 °C
- 40 ºC
0.3
100
0.2
125 ºC
25 °C
50
0.1
- 40 ºC
FE
0
0.0001
0.001
0.01
0.1
1
0
0.1
I
C
- COLLECTOR CURRENT (A)
1
10
I
C
- COLLECTOR CURRENT (mA)
P 74
100
h
V
BE(ON)
BASE-EMITTER ON VOLTAGE (V)
-
V
BESAT
- BASE-EMITTER VOLTAGE (V)
Base-Emitter Saturation
Voltage vs Collector Current
1
Base-Emitter ON Voltage vs
Collector Current
1
0.8
- 40 ºC
25 °C
0.8
- 40 ºC
25 °C
0.6
125 ºC
0.6
125 ºC
0.4
β
= 10
0.4
V
CE
= 5V
0.2
0.1
I
C
1
10
- COLLECTOR CURRENT (mA)
P 4
100
0.2
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
P 4
100
Collector-Cutoff Current
vs Ambient Temperature
I
CBO
- COLLECTOR CURRENT (nA)
100
V
CB
= 100V
10
1
0.1
25
50
75
100
125
T
A
- AMBIENT TEMPERATURE (ºC)
P 4
150
BV
CER
- BREAKDOWN VOLTAGE (V)
Collector-Emitter Breakdown
Voltage with Resistance
Between Emitter-Base
220
210
200
190
180
170
0.1
1
10
100
1000
RESISTANCE (k
Ω
)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
