2N5401 / MMBT5401
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
Collector-Emitter Breakdown Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
I
C
= 1.0 mA, I
B
= 0
I
C
= 100
µA,
I
E
= 0
I
E
= 10
µA,
I
C
= 0
V
CB
= 120 V, I
E
= 0
V
CB
= 120 V, I
E
= 0, T
A
= 100°C
V
EB
= 3.0 V, I
C
= 0
150
160
5.0
50
50
50
V
V
V
nA
µA
nA
ON CHARACTERISTICS*
h
FE
DC Current Gain
I
C
= 1.0 mA, V
CE
= 5.0 V
I
C
= 10 mA, V
CE
= 5.0 V
I
C
= 50 mA, V
CE
= 5.0 V
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
50
60
50
240
0.2
0.5
1.0
1.0
V
V
V
V
V
CE(
sat
)
V
BE(
sat
)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
f
T
C
obo
NF
Current Gain - Bandwidth Product
Output Capacitance
Noise Figure
I
C
= 10 mA, V
CE
= 10 V,
f = 100 MHz
V
CB
= 10 V, I
E
= 0,
f = 1.0 MHz
I
C
= 250
µA,
V
CE
= 5.0 V,
R
S
= 1.0 kΩ,
f = 10 Hz to 15.7 kHz
100
300
6.0
8.0
MHz
pF
dB
*
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
Spice Model
PNP (Is=21.48f Xti=3 Eg=1.11 Vaf=100 Bf=132.1 Ne=1.375 Ise=21.48f Ikf=.1848 Xtb=1.5 Br=3.661 Nc=2
Isc=0 Ikr=0 Rc=1.6 Cjc=17.63p Mjc=.5312 Vjc=.75 Fc=.5 Cje=73.39p Mje=.3777 Vje=.75 Tr=1.476n Tf=641.9p
Itf=0 Vtf=0 Xtf=0 Rb=10)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
