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EX29DS160-90RTCI 参数 Datasheet PDF下载

EX29DS160-90RTCI图片预览
型号: EX29DS160-90RTCI
PDF下载: 下载PDF文件 查看货源
内容描述: 32兆( 4M ×8 / 2M ×16 )的CMOS 3.0伏只,同时操作闪存 [32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory]
分类和应用: 闪存
文件页数/大小: 59 页 / 771 K
品牌: EXCELSEMI [ EXCEL SEMICONDUCTOR INC. ]
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E S I  
E S I  
ADVANCED INFORMATION  
Excel Semiconductor inc.  
3.3V  
Table 12. Test Specifications  
2.7k  
Test Condition  
70  
90  
Device  
Under  
Test  
Output Load  
1TTL gate  
C
L
Output Load Capacitance, CL (including jig  
capacitance)  
6.2k  
30pF  
100pF  
5 ns  
Input Rise and Fall Times  
Input Pulse Levels  
0.0V ~ 3.0V  
1.5V  
Input timing measurement reference levels  
Output timing measurement reference levels  
Figure 16. Test Setup  
1.5V  
Note: Diodes are IN3064 or equivalent  
Key To Switching Waveforms  
WAVEFORM  
INPUTS  
OUTPUTS  
Steady  
Changing from H to L  
Changing from L to H  
Don’t Care, Any Change Permitted  
Does Not Apply  
Changing, State Unknown  
Center Line is High Impedance State (High Z)  
3.0V  
1.5V Output  
Input 1.5V  
Measurement Level  
0.0V  
Figure 17. Input Waveforms and Measurement Levels  
37  
Rev. 0E May 25, 2006  
ES29DL320  
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