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ES29BDS160D-12RTG 参数 Datasheet PDF下载

ES29BDS160D-12RTG图片预览
型号: ES29BDS160D-12RTG
PDF下载: 下载PDF文件 查看货源
内容描述: 32兆( 4M ×8 / 2M ×16 )的CMOS 3.0伏只,引导扇区闪存 [32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory]
分类和应用: 闪存
文件页数/大小: 59 页 / 583 K
品牌: EXCELSEMI [ EXCEL SEMICONDUCTOR INC. ]
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E S I  
E S I  
Excel Semiconductor inc.  
Document Title  
32M Flash Memory  
Revision History  
Revision Number  
Data  
Items  
1. The preliminary is removed from the datasheet.  
2. The Icc3 (max) is changed from 5uA to 10uA.  
3. The Icc4 (max) is changed from 5uA to 10uA.  
4. The Icc5 (max) is changed from 5uA to 10uA.  
Rev. 2A  
Dec. 1, 2004  
5. The size of FBGA is changed from 8mm x 9mm to 7mm x 8mm.  
6. The overall thickness of FBGA , A (max), is changed from 1.20  
to 1.10. Therefore, ball height (A1) and body thickness (A2)  
also is changed accordingly.  
7. The ball diameter of FBGA, b(min), b(nom), b(max), is changed  
from 0.25, 0.30, and 0.35 to 0.30, 0.35, and 0.40 respectively.  
1. The arrow from Erase Suspend Read to Read is changed to  
Sector Erase.  
Rev. 2B  
Dec. 13, 2004  
2. V  
(min), 2.3V is added  
LKO  
Rev. 2C  
Rev. 2D  
Apr. 1, 2005  
Jan. 5, 2005  
1. Remove FBGA Package Type.  
1. Add RoHS-Compliant Package Option.  
Excel Semiconductor Inc.  
1010 Keumkang Hightech Valley, Sangdaewon1-Dong 133-1, Jungwon-Gu, Seongnam-Si, Kyongki-Do, Rep.  
of Korea. Zip Code : 462-807 Tel : +82-31-777-5060 Fax : +82-31-740-3798 Homepage : www.excelsemi.com  
/
The attached datasheets are provided by Excel Semiconductor.inc (ESI). ESI reserves the right to change the spec-  
ifications and products. ESI will answer to your questions about device. If you have any questions, please contact the  
ESI office.  
59  
Rev. 2D Jan 5, 2006  
ES29LV320D  
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