E S I
E S I
Excel Semiconductor inc.
Document Title
32M Flash Memory
Revision History
Revision Number
Data
Items
Rev. 0A
Nov. 10, 2003
Initial Release Version.
1. The typical program/erase current value changed from 30mA to
15mA.
Rev. 0B
Rev. 0C
Nov. 26, 2003
Feb. 4, 2004
2. The Table 6 for manufacture ID is changed to 4Ah.
3. The extended temperature range is removed and the commer-
cial temperature range is added.
1. E/W cycle number is changed from 1,000,000 to 100,000.
2. CFI code is changed : 45h : 04h ----> 45h : 00h
1. The format of datasheet is entirely changed and updated
2. 70ns product is removed
3. 80R product ( 80ns : Vcc = 3.0 ~ 3.6V) is newly added.
4. A command diagram is added.
5. Sector protection / unprotection algorithm by A9 high-voltage
method is described.
Rev. 1A
Mar. 1, 2004
6. A limitation to the maximum number of E/W cycles in the Secu-
rity Sector is described (300 E/W cycles at Max.).
7. A product selection table is added.
8. Test condtions for the typical performance of program/erase :
after 100,000 E/W cycles ----> after 10,000 E/W cycles
1. The bias condition of RESET# in Table 1 for A9 high-Voltage is
Rev. 1B
Apr. 23, 2004
changed from V to H.
ID
2. The bias condition of A9 in Table 1 for A9 high-Voltage method
is added.
58
Rev. 2D Jan 5, 2006
ES29LV320D
EXCELSEMI [ EXCEL SEMICONDUCTOR INC. ]
