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ES29BDS160FB-12TG 参数 Datasheet PDF下载

ES29BDS160FB-12TG图片预览
型号: ES29BDS160FB-12TG
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆( 2M ×8 / 1M ×16 )的CMOS 3.0伏只,引导扇区闪存 [16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory]
分类和应用: 闪存
文件页数/大小: 54 页 / 708 K
品牌: EXCELSEMI [ EXCEL SEMICONDUCTOR INC. ]
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E S I  
E S I  
Excel Semiconductor inc.  
3.3V  
Table 12. Test Specifications  
2.7k  
Test Condition  
70R  
90  
120  
Device  
Under  
Test  
Output Load  
1TTL gate  
30 pF  
C
L
Output Load Capacitance, CL (including jig  
capacitance)  
30 pF  
100 pF  
6.2k  
Input Rise and Fall Times  
5 ns  
0.0 - 3.0 V  
1.5 V  
Input Pulse Levels  
Input timing measurement reference levels  
Output timing measurement reference levels  
Figure 14. Test Setup  
1.5 V  
Note: Diodes are IN3064 or equivalent  
Key To Switching Waveforms  
WAVEFORM  
INPUTS  
OUTPUTS  
Steady  
Changing from H to L  
Changing from L to H  
Don’t Care, Any Change Permitted  
Does Not Apply  
Changing, State Unknown  
Center Line is High Impedance State (High Z)  
3.0V  
1.5V Output  
Input 1.5V  
Measurement Level  
0.0V  
Figure 15. Input Waveforms and Measurement Levels  
32  
Rev. 1C Jan 5 , 2006  
ES29LV160D  
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