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ES29LV400ET-90RTGI 参数 Datasheet PDF下载

ES29LV400ET-90RTGI图片预览
型号: ES29LV400ET-90RTGI
PDF下载: 下载PDF文件 查看货源
内容描述: 为4Mbit ( 512Kx 8 / 256K ×16 )的CMOS 3.0伏只,引导扇区闪存 [4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory]
分类和应用: 闪存
文件页数/大小: 51 页 / 679 K
品牌: EXCELSEMI [ EXCEL SEMICONDUCTOR INC. ]
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E S I  
E S I  
Excel Semiconductor inc.  
AC CHARACTERISTICS  
Erase Command Sequence (last two cycles)  
Read Status Data  
tAH  
tWC  
tAS  
SA  
Address  
2AAh  
VA  
VA  
555h for chip erase  
CE#  
tCH  
OE#  
WE#  
tCS  
tWP  
tWHWH2  
tWPH  
tDS  
tDH  
10h for chip erase  
30h  
In  
Complete  
55h  
Progress  
DATA  
tRB  
tBUSY  
RY/BY#  
Vcc  
tVCS  
NOTES :  
1. SA = sector address(for Sector Erase), VA = valid address for reading status data(see “Write Operation Status”).  
2. These waveforms are for the word mode.  
Figure 21. Chip/Sector Erase Operation Timings  
34  
Rev.0B January 5, 2006  
ES29LV400E  
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