欢迎访问ic37.com |
会员登录 免费注册
发布采购

ES29F320FT-70WC 参数 Datasheet PDF下载

ES29F320FT-70WC图片预览
型号: ES29F320FT-70WC
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆( 2M ×8 / 1M ×16 )的CMOS 3.0伏只,引导扇区闪存 [16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory]
分类和应用: 闪存
文件页数/大小: 53 页 / 700 K
品牌: EXCELSEMI [ EXCEL SEMICONDUCTOR INC. ]
 浏览型号ES29F320FT-70WC的Datasheet PDF文件第1页浏览型号ES29F320FT-70WC的Datasheet PDF文件第3页浏览型号ES29F320FT-70WC的Datasheet PDF文件第4页浏览型号ES29F320FT-70WC的Datasheet PDF文件第5页浏览型号ES29F320FT-70WC的Datasheet PDF文件第6页浏览型号ES29F320FT-70WC的Datasheet PDF文件第7页浏览型号ES29F320FT-70WC的Datasheet PDF文件第8页浏览型号ES29F320FT-70WC的Datasheet PDF文件第9页  
E S I  
E S I  
Excel Semiconductor inc.  
GENERAL PRODUCT DESCRIPTION  
The ES29LV160 is completely compatible with the  
JEDEC standard command set of single power sup-  
ply Flash. Commands are written to the internal  
command register using standard write timings of  
microprocessor and data can be read out from the  
cell array in the device with the same way as used in  
other EPROM or flash devices.  
The ES29LV160 is a 16 megabit, 3.0 volt-only flash  
memory device, organized as 2M x 8 bits (Byte  
mode) or 1M x 16 bits (Word mode) which is config-  
urable by BYTE#. Four boot sectors and thirty one  
main sectors are provided : 16Kbytes x 1, 8Kbytes  
x 2, 32Kbytes x 1 and 64Kbytes x 31. The device is  
manufactured with ESI’s proprietary, high perfor-  
mance and highly reliable 0.18um CMOS flash  
technology. The device can be programmed or  
erased in-system with standard 3.0 Volt Vcc supply  
( 2.7V-3.6V) and can also be programmed in stan-  
dard EPROM programmers. The device offers min-  
imum endurance of 100,000 program/erase cycles  
and more than 10 years of data retention.  
The ES29LV160 offers access time as fast as 70ns  
or 90ns, allowing operation of high-speed micropro-  
cessors without wait states. Three separate control  
pins are provided to eliminate bus contention : chip  
enable (CE#), write enable (WE#) and output  
enable (OE#).  
All program and erase operation are automatically  
and internally performed and controlled by embed-  
ded program/erase algorithms built in the device.  
The device automatically generates and times the  
necessary high-voltage pulses to be applied to the  
cells, performs the verification, and counts the num-  
ber of sequences. Some status bits (DQ7, DQ6 and  
DQ5) read by data# polling or toggling between  
consecutive read cycles provide to the users the  
internal status of program/erase operation: whether  
it is successfully done or still being progressed.  
2
Rev. 0B January 5 , 2006  
ES29LV160E  
 复制成功!