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ES29F320FT-70WC 参数 Datasheet PDF下载

ES29F320FT-70WC图片预览
型号: ES29F320FT-70WC
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆( 2M ×8 / 1M ×16 )的CMOS 3.0伏只,引导扇区闪存 [16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory]
分类和应用: 闪存
文件页数/大小: 53 页 / 700 K
品牌: EXCELSEMI [ EXCEL SEMICONDUCTOR INC. ]
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E S I  
E S I  
Excel Semiconductor inc.  
The command register and all internal program/  
erase circuits are disabled, and the device resets to  
the read mode. Subsequent writes are ignored until  
In-System Unprotection  
“In-system unprotection”, the primary method,  
Vcc is greater than V  
. The system must provide  
requires V (11.5V~12.5V) on the RESET# with  
LKO  
ID  
proper signals to the control pins to prevent unin-  
A6=1, A1=1, and A0=0. This method can be imple-  
mented either in-system or via programming equip-  
ment. This method uses standard microprocessor  
bus cycle timing. Refer to Fig. 26 for timing diagram  
and Fig. 3 for the unprotection algorithm.  
tentional writes when Vcc is greater than V  
.
LKO  
Write Pulse “Glitch” Protection  
Noise pulses of less than 5ns (typical) on OE#, CE#  
or WE# do not initiate a write cycle.  
A9 High-Voltage Unprotection  
“High-voltage unprotection”, the alternate method  
intended only for programming equipment, must  
Logical inhibit  
force V (11.5~12.5V) on address pin A9 and con-  
Write cycles are inhibited by holding any one of  
ID  
trol pin OE# with A6=1, A1=1 and A0=0. Refer to  
Fig. 29 for timing diagram and Fig. 5 for the unpro-  
tection algorithm.  
OE#=V , CE#=V or WE#=V . To initiate a write  
IL  
IH  
IH  
cycle, CE# and WE# must be a logical zero while  
OE# is a logical one.  
Temporary Sector Unprotect  
Power-up Write Inhibit  
This feature allows temporary unprotection of previ-  
ously protected sectors to change data in-system.  
The Sector Unprotect mode is activated by setting  
If WE#=CE#=V and OE#=V during power up,  
IL  
IH  
the device does not accept any commands on the  
rising edge of WE#. The internal state machine is  
automatically reset to the read mode on power-up.  
the RESET# pin to V (11.5V-12.5V). During this  
ID  
mode, formerly protected sectors can be pro-  
grammed or erased by selecting the sector  
addresses. Once V is removed from the RESET#  
ID  
START  
pin, all the previously protected sectors are pro-  
tected again. Fig. 1 shows the algorithm, and Fig. 25  
shows the timing diagrams for this feature.  
RESET# = VID  
(Note 1)  
HARDWARE DATA PROTECTION  
The ES29LV160 device provides some protection  
measures against accidental erasure or program-  
ming caused by spurious system level signals that  
may exist during power transition. During power-up,  
all internal registers and latches in the device are  
cleared and the device automatically resets to the  
read mode. In addition, with its internal state  
machine built-in the device, any alteration of the  
memory contents or any initiation of new operation-  
can only occur after successful completion of spe-  
cific command sequences. And several features are  
incorporated to prevent inadvertent write cycles  
resulting from Vcc power-up and power-down transi-  
tion or system noise.  
Perform Erase or  
Program Operations  
RESET# = VIH  
Temporary Sector  
Unprotect Completed  
(Note 2)  
Notes:  
1. All protected sectors are unprotected .  
2. All previously protected sectors are protected once again.  
Low Vcc Write inhibit  
When Vcc is less than V  
, the device does not  
LKO  
accept any write cycles. This protects data during  
Vcc power-up and power-down.  
Figure 1. Temporary Sector Unprotect  
Operation  
9
Rev. 0B January 5 , 2006  
ES29LV160E  
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