欢迎访问ic37.com |
会员登录 免费注册
发布采购

ES25P80-75IC2Y 参数 Datasheet PDF下载

ES25P80-75IC2Y图片预览
型号: ES25P80-75IC2Y
PDF下载: 下载PDF文件 查看货源
内容描述: 8Mbit的CMOS 3.0伏闪存为75Mhz SPI总线接口 [8Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface]
分类和应用: 闪存
文件页数/大小: 35 页 / 436 K
品牌: EXCELSEMI [ EXCEL SEMICONDUCTOR INC. ]
 浏览型号ES25P80-75IC2Y的Datasheet PDF文件第18页浏览型号ES25P80-75IC2Y的Datasheet PDF文件第19页浏览型号ES25P80-75IC2Y的Datasheet PDF文件第20页浏览型号ES25P80-75IC2Y的Datasheet PDF文件第21页浏览型号ES25P80-75IC2Y的Datasheet PDF文件第23页浏览型号ES25P80-75IC2Y的Datasheet PDF文件第24页浏览型号ES25P80-75IC2Y的Datasheet PDF文件第25页浏览型号ES25P80-75IC2Y的Datasheet PDF文件第26页  
E S I  
E S I  
ADVANCED INFORMATION  
Excel Semiconductor inc.  
Release from Deep Power Down (RES)  
Release from Deep Power Down and  
Read Electronic Signature (RES)  
The Release from Deep Power Down (RES) instruc-  
tion provides the only way to exit the Deep Power  
Down mode. Once the device has entered the Deep  
Power Down mode, all instructions are ignored  
except the Release from Deep Power Down (RES)  
instruction. Executing this instruction takes the  
device out of Deep Power Down mode.  
Once the device has entered Deep Power Down  
mode, all instructions are ignored except the RES  
instruction. The RES instruction can also be used to  
read the old style 8-bit Electronic Signature of the  
device on the SO pin. The RES instruction always  
provides access to the Electronic Signature of the  
device (except while an Erase, Program or WRSR  
cycle is in progress), and can be applied even if DP  
mode has not been entered. Any RES instruction  
executed while an Erase, Program or WRSR cycle  
is in progress is not decoded, and has no effect on  
the cycle in progress.  
The Release from Deep Power Down (RES) instruc-  
tion is entered by driving Chip Select (CS#) Low, fol-  
lowed by the instruction code on Serial Data Input  
(SI). Chip Select (CS#) must be driven Low for the  
entire duration of the sequence.  
The instruction sequence is shown in Figure 17.  
The device features an 8-bit Electronic Signature,  
whose value for the ES25P80 is 13h. This can be  
read using RES instruction.  
Driving Chip Select (CS#) High after the 8-bit instruc-  
tion byte has been received by the device, but before  
the whole of the 8-bit Electronic Signature has been  
transmitted for the first time, still insures that the  
device is put into Standby mode. If the device was  
previously in the Deep Power Down mode, though,  
the transition to the Stand-by Power mode is delayed  
The device is first selected by driving Chip Select  
(CS#) Low. The instruction code is followed by 3  
dummy bytes, each bit being latched-in on Serial  
Data Input (SI) during the rising edge of Serial Clock  
(SCK). Then, the 8-bit Electronic Signature, stored  
in the memory, is shifted out on Serial Data Output  
(SO), each bit being shifted out during the falling  
edge of Serial Clock (SCK).  
by t  
, and Chip Select (CS#) must remain High for  
RES  
at least t  
, as specified in Table 8. Once in  
RES(max)  
the Stand-by Power mode, the device waits to be  
selected, so that it can receive, decode and execute  
instructions.  
The instruction sequence is shown in Figure 18.  
CS#  
t
RES  
0
1
2
3
4
5
6
7
SCK  
Instruction  
SI  
1
0
1
0
1
0
1
1
Deep Power Down Mode  
Standby Mode  
Figure 17. Release from Deep Power Down Instruction Sequence  
22  
Rev. 0D May, 11, 2006  
ES25P80  
 复制成功!