E S I
E S I
ADVANCED INFORMATION
Excel Semiconductor inc.
DC CHARACTERISTICS
This section summarizes the DC and AC Characteristics of the device. Designers should check that the oper-
ating conditions in their circuit match the measurement conditions specified in the Test Specifications in Table
7, when relying on the quoted parameters.
Table.6 DC Characteristics
Symbol Description
Test Conditions
Min.
Typ. Max.
Unit
V
Vcc
ILI
Supply Voltage
2.7
3
3.6
1
Input Leakage Current
VIN = GND to Vcc
CS# = Vcc
uA
ISB
IDP
ILO
Standby Current
50
10
1
uA
uA
uA
Deep Power Down Current
Output Leakage Current
CS# = Vcc
1
VIN = GND to Vcc
SCK = 0.1 Vcc / 0.9 Vcc 40MHz
SO = Open
6
ICCI
Active Read Current
mA
SCK = 0.1Vcc / 0.9 Vcc
SO= Open
75 MHz
12
ICC2
ICC3
ICC4
ICC5
VIL
Active Page Program Current
Active WRSR Current
Active Sector Erase Current
Active Bulk Erase Current
Input Low Voltage
CS# = Vcc
CS# = Vcc
CS# = Vcc
CS# = Vcc
24
mA
mA
mA
mA
V
24
24
24
- 0.3
0.3 Vcc
Vcc + 0.5
0.4
VIH
Input High Voltage
0.7 Vcc
V
VOL
VOH
Output Low Voltage
IOL = 1.6 mA, Vcc = Vcc min
IOH = -0.1mA,
V
Output High Voltage
Vcc - 0.2
V
Notes:
1. Typical values are at TA = 25oC and Vcc = 3V
28
Rev. 0E May 11 , 2006
ES25P16
EXCELSEMI [ EXCEL SEMICONDUCTOR INC. ]
