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ES25P16 参数 Datasheet PDF下载

ES25P16图片预览
型号: ES25P16
PDF下载: 下载PDF文件 查看货源
内容描述: 16Mbit的CMOS 3.0伏闪存为75Mhz SPI总线接口 [16Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface]
分类和应用: 闪存
文件页数/大小: 35 页 / 436 K
品牌: EXCELSEMI [ EXCEL SEMICONDUCTOR INC. ]
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E S I  
E S I  
ADVANCED INFORMATION  
Excel Semiconductor inc.  
CS#  
0
1
2
3
4
5
6
7
SCK  
Instruction  
SI  
1
1
0
1
0
1
0
1
Figure 22. Erase Parameter Page( PE ) Instruction Sequence  
1) Vcc (min) at power-up, and then for a further  
Erase Parameter Page(PE)  
delay of t (as described in Table 5)  
PU  
2) Vss at power-down  
The Erase Parameter Page Instruction sets all 256  
bytes of memory in the Parameter Page to the  
erased state of all 1s (FFh). A Write Enable instruc-  
tion must be executed before the device will accept  
the Erase Parameter Page instruction(Status Regis-  
ter bit WEL must equal 1). The instruction is initiated  
by driving the CS# pin low and shifting the instruc-  
tion code “D5h”. The Erase Parameter Page instruc-  
tion sequence is shown in Figure 22.  
A simple pull-up resistor on Chip Select (CS#) can  
usually be used to insure safe and proper power-up  
and power-down.  
The device ignores all instructions until a time delay  
of t (as described in Table 5) has elapsed after the  
PU  
moment that Vcc rises above the minimum Vcc  
threshold. However, correct operation of the device  
is not guaranteed if by this time Vcc is still below Vcc  
(min). No Write Status Register, Program or Erase  
The CS# pin must be driven high after the eighth has  
been latched. If this is not done the Erase Parameter  
Page instruction will not be executed. After CS# is  
driven high, the self-timed Erase Parameter Page  
instructions should be sent until t  
after Vcc  
PU  
reaches the minimum Vcc threshold (See Figure  
23).  
instuction will commence for a time duration of t  
.
PE  
While the Erase Parameter Page Cycle is in  
progress, the Read Status Register instruction may  
still be accessed to check the status of the WIP bit.  
The WIP bit is a 1 during the Erase Parameter Page  
cycel and becomes a 0 when finished and the device  
is ready to accept other instructions again. After the  
Erase Parameter Page cycle has started the Write  
Enable Latch(WEL) bit in the Status Register is  
cleared to 0. The Erase Parameter Page instruction  
will not be executed if any page is protected by the  
Block Protect(BP2, BP1, BP0) bits.  
At power-up, the device is in Standby mode (not  
Deep Power Down mode) and the WEL bit is reset.  
Normal precautions must be taken for supply rail  
decoupling to stabilize the Vcc feed. Each device in  
a system should have the Vcc rail decoupled by a  
suitable capacitor close to the package pins (this  
capacitor is generally of the order of 0.1uF).  
At power-down, when Vcc drops from the operating  
voltage to below the minimum Vcc threshold, all  
operations are disabled and the device does not  
respond to any instructions. (The designer needs to  
be aware that if a power-down occurs while a Write,  
Program or Erase cycle is in progress, data corrup-  
tion can result.)  
Power-up and Power-down  
The device must not be selected at power-up or  
power-down (that is, CS# must follow the voltage  
applied on Vcc) until Vcc reaches the correct value  
as follows:  
26  
Rev. 0E May 11 , 2006  
ES25P16  
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