EMB26N10F
Capacitance Characteristics
Gate Charge Characteristics
4000
10
8
f = 1MHz
VGS = 0 V
ID = 30A
Ciss
3000
2000
6
VDS = 25V
50V
4
Coss
1000
0
2
0
Crss
10
100
20
Q g ‐ Gate Charge( nC )
30
40
0
25
50
75
0
VDS ‐ Drain‐Source Voltage( V )
Single Pulse Maximum Power Dissipation
Maximum Safe Operating Area
600
Single Pulse
°
θJC = 3.1 C/W
103
R
°
TC = 25 C
500
400
300
200
100
0
102
RDS(ON) Limited
10μs
100μs
1ms
101
100
10ms
DC
TC=25°C
R
θJC=3.1°C/W
Vgs=10V
Single Pulse
10‐1
0.01
10
100
1000
0.1
1
100
101
102
Single Pulse Time( sec )
VDS, Drain‐Source Voltage( V )
Transient Thermal Response Curve
100
10‐1
10‐2
D=0.5
0.2
※Note :
1. RθJC(t)=3.1°C/W Max.
2. Duty Cycle, D=t / t
3. TJM ‐ T
1
2
C
=PDM*RθJC(t)
0.1
0.05
PDM
0.02
0.01
t1
single pulse
t2
10‐5
10‐4
10‐3
10‐2
,Time( sec )
10‐1
100
101
t
1
2013/12/20
p.5
EXCELLIANCE [ Excelliance MOS ]
