EMB26N10F
TYPICAL CHARACTERISTICS
On‐Resistance Variation with Drain Current and Gate Voltage
On‐Region Characteristics
2.4
2.2
2.0
1.8
100
80
VGS = 10V
8.0V
7.0V
60
40
4.5V
VGS = 4.5 V
1.6
1.4
1.2
7.0 V
8.0 V
10 V
20
1.0
0.8
0
2
4
6
8
0
10
0
20
40
60
80
100
V
DS ‐ Drain Source Voltage( V )
ID ‐ Drain Current( A )
On‐Resistance Variation with Temperature
ID = 30A
On‐Resistance Variation with Gate‐Source Voltage
1.9
0.085
ID = 15 A
VGS = 10V
0.075
0.065
1.6
1.3
1.0
0.7
0.4
0.055
0.045
0.035
0.025
0.015
0.005
TA = 125°C
TA = 25°C
‐50
‐25
0
25
50
75
100
125
150
2
4
6
8
10
TJ ‐ Junction Temperature (° C)
VGS ‐ Gate‐Source Voltage( V )
Body Diode Forward Voltage Variation with
Source Current and Temperature
Transfer Characteristics
60
100
10
VDS = 10V
V GS= 0V
50
40
30
T
A= 125° C
TA = ‐55°C
25°C
25° C
1
0.1
‐55° C
125°C
20
10
0
0.01
2
0.001
1
3
4
5
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
GS ‐ Gate‐Source Voltage( V )
VSD‐ Body Diode Forward Voltage(V)
2013/12/20
p.4
EXCELLIANCE [ Excelliance MOS ]
