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EMB26N10F 参数 Datasheet PDF下载

EMB26N10F图片预览
型号: EMB26N10F
PDF下载: 下载PDF文件 查看货源
内容描述: [N‐Channel Logic Level Enhancement Mode Field Effect Transistor]
分类和应用:
文件页数/大小: 5 页 / 211 K
品牌: EXCELLIANCE [ Excelliance MOS ]
 浏览型号EMB26N10F的Datasheet PDF文件第1页浏览型号EMB26N10F的Datasheet PDF文件第2页浏览型号EMB26N10F的Datasheet PDF文件第3页浏览型号EMB26N10F的Datasheet PDF文件第5页  
EMB26N10F  
TYPICAL CHARACTERISTICS  
OnResistance Variation with Drain Current and Gate Voltage  
OnRegion Characteristics  
2.4  
2.2  
2.0  
1.8  
100  
80  
VGS = 10V  
8.0V  
7.0V  
60  
40  
4.5V  
VGS = 4.5 V  
1.6  
1.4  
1.2  
7.0 V  
8.0 V  
10 V  
20  
1.0  
0.8  
0
2
4
6
8
0
10  
0
20  
40  
60  
80  
100  
V
DS Drain Source Voltage( V )  
ID Drain Current( A )  
OnResistance Variation with Temperature  
ID = 30A  
OnResistance Variation with GateSource Voltage  
1.9  
0.085  
ID = 15 A  
VGS = 10V  
0.075  
0.065  
1.6  
1.3  
1.0  
0.7  
0.4  
0.055  
0.045  
0.035  
0.025  
0.015  
0.005  
TA = 125°C  
TA = 25°C  
50  
25  
0
25  
50  
75  
100  
125  
150  
2
4
6
8
10  
TJ Junction Temperature (° C)  
VGS GateSource Voltage( V )  
Body Diode Forward Voltage Variation with  
Source Current and Temperature  
Transfer Characteristics  
60  
100  
10  
VDS = 10V  
V GS= 0V  
50  
40  
30  
T
A= 125° C  
TA = 55°C  
25°C  
25° C  
1
0.1  
55° C  
125°C  
20  
10  
0
0.01  
2
0.001  
1
3
4
5
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
V
GS GateSource Voltage( V )  
VSDBody Diode Forward Voltage(V)  
2013/12/20  
p.4