EMP213
UPDATED 05/08/2008
12.5 – 15.5 GHz Power Amplifier MMIC
FEATURES
•
•
•
•
•
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12.5 – 15.5 GHz Operating Frequency Range
27.0dBm Output Power at 1dB Compression
16.0 dB Typical Small Signal Gain
-41dBc OIMD3 @Each Tone Pout 17dBm
Point-to-point and point-to-multipoint radio
Military Radar Systems
Dimension: 2250um X 1130um
Thickness: 85um ± 15um
APPLICATIONS
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T
a
= 25
°C,
50 ohm, VDD=7V, IDQ=400mA)
SYMBOL
F
P1dB
Gss
OIMD3
Input RL
Output RL
NF
Idss
V
DD
Rth
Tb
PARAMETER/TEST CONDITIONS
Operating Frequency Range
Output Power at 1dB Gain Compression
Small Signal Gain
Output 3
rd
Order Intermodulation Distortion
@∆f=10MHz, Each Tone Pout 17dBm
Ids = 60% +10%Idss
Input Return Loss
Output Return Loss
Noise Figure
Saturated Drain Current
Drain Voltage
Thermal Resistance (Au-Sn Eutectic Attach)
Operating Base Plate Temperature
-35
V
DS
=3V, V
GS
=0V
475
MIN
12.5
26.0
14.0
27.0
16.0
-41
-12
-8
9
620
7
22
+85
750
8
o
TYP
MAX
15.5
UNITS
GHz
dBm
dB
-38
-8
-5
dBc
dB
dB
dB
mA
V
C/W
ºC
MAXIMUM RATINGS AT 25°C
1,2
SYMBOL
Vds
V
GS
Ids
I
GSF
P
IN
T
CH
T
STG
P
T
CHARACTERISTIC
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
12V
-8V
Idss
57mA
24dBm
175°C
-65/175°C
6.2W
CONTINUOUS
8V
-4V
650mA
9.5 mA
@ 3dB compression
150°C
-65/150°C
5.2W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation Vds*Ids < (T
CH
–Tb)/R
TH
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 1 of 4
Revised May 2008
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
