EIC1314-8
ISSUED 2/06/2009
13.75-14.5 GHz 8-Watt Internally Matched Power FET
Power Dissipation V.S Temperature
40
35
Total Power Dissipation / W
Pout [S.C.L.] (dBm)
THIRD-ORDER
INTERCEPT POINT IP3
IP
3
= Pout + IM3/2
f1 or f2
30
25
20
15
10
5
0
0
50
100
Temperature / °C
150
200
Pout
Pin
IM3
IM3
f1 f2
(2f1-f2) f1 f2 (2f2-f1)
(2f2 - f1) or (2f1 - f2)
Pin [S.C.L.] (dBm)
IM3 v.s Output Power
f1=14.5 GHz, f2=14.49 GHz
-20
-30
-40
IM3 / dBc
-50
-60
-70
-80
13
16
19
22
Pout (S.C.L) / dBm
25
28
31
Typical IMD3 Data (T= 25°C)
V
DS
= 10 V, I
DSQ
≈
2400 mA
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 3 of 4
Revised February 2009
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
