EIC1314-8
ISSUED 2/06/2009
13.75-14.5 GHz 8-Watt Internally Matched Power FET
FEATURES
•
•
•
•
•
•
13.75– 14.5GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+39.0 dBm Output Power at 1dB Compression
6.0 dB Power Gain at 1dB Compression
24% Power Added Efficiency
Hermetic Metal Flange Package
EIC1314-8
ELECTRICAL CHARACTERISTICS (T
a
= 25°C)
SYMBOL
P
1dB
G
1dB
∆G
PAE
IMD3
Id
1dB
I
DSS
V
P
R
TH
PARAMETERS/TEST CONDITIONS
1
Output Power at 1dB Compression
f = 13.75-14.5GHz
V
DS
= 10 V, I
DSQ
≈
2400mA
Gain at 1dB Compression
f = 13.75-14.5GHz
V
DS
= 10 V, I
DSQ
≈
2400mA
Gain Flatness
f = 13.75-14.5GHz
V
DS
= 10 V, I
DSQ
≈
2400mA
Power Added Efficiency at 1dB Compression
f = 13.75-14.5GHz
V
DS
= 10 V, I
DSQ
≈
2400mA
Output 3rd Order Intermodulation Distortion
∆f
= 10 MHz 2-Tone Test; Pout = 28.0 dBm S.C.L
2
V
DS
= 10 V, I
DSQ
≈
65% IDSS
f = 14.50 GHz
Drain Current at 1dB Compression
Saturated Drain Current
Pinch-off Voltage
Thermal Resistance
3
2) S.C.L. = Single Carrier Level.
Caution! ESD sensitive device.
MIN
38.5
5.0
TYP
39.0
6.0
MAX
UNITS
dBm
dB
±0.6
24
-44
-47
2500
4000
-2.5
3.5
2800
6000
-4.0
4.0
o
dB
%
dBc
mA
mA
V
C/W
f = 13.75-14.5GHz
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, I
DS
= 40 mA
Note: 1) Tested with 15 Ohm gate resistor.
3) Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING
1,2
SYMBOLS
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
Reverse Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
1
15
-5
86.4mA
-14.4mA
37 dBm
175 C
o
-65 to +175 C
o
CONTINUOUS
2
10V
-4V
28.8mA
-4.8mA
@ 3dB Compression
175 C
-65 to +175
o
C
37.5W
o
Vds
Vgs
Igsf
Igsr
Pin
Tch
Tstg
Pt
37.5W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
page 1 of 4
Revised February 2009
EXCELICS [ EXCELICS SEMICONDUCTOR, INC. ]
