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MP7529BKN 参数 Datasheet PDF下载

MP7529BKN图片预览
型号: MP7529BKN
PDF下载: 下载PDF文件 查看货源
内容描述: 5 V CMOS双缓冲乘法8位数字 - 模拟转换器 [5 V CMOS Dual Buffered Multiplying 8-Bit Digital-to-Analog Converter]
分类和应用: 转换器光电二极管
文件页数/大小: 12 页 / 117 K
品牌: EXAR [ EXAR CORPORATION ]
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MP7529B  
ELECTRICAL CHARACTERISTICS (CONT’D)  
25°C  
Typ  
Tmin to Tmax  
Parameter  
Symbol  
Min  
Max  
Min  
Max  
Units  
Test Conditions/Comments  
2
ANALOG OUTPUTS  
Output Capacitance  
C
C
120  
50  
120  
50  
pF  
pF  
DAC inputs all 1’s  
DAC inputs all 0’s  
OUTA/B  
OUTA/B  
POWER SUPPLY  
Supply Current  
I
1
2
1
2
mA  
mA  
All digital inputs = 0 V or 5 V  
DD  
All digital inputs = V or V  
IL  
IH  
4
TIMING SPECIFICATIONS  
Chip Select to Write Set-Up Time  
Chip Select to Write Hold Time  
DAC Select to Write Set-Up Time  
DAC Select to Write Hold Time  
Data Valid to Write Set-Up Time  
Data Valid to Write Hold Time  
t
60  
15  
60  
15  
60  
0
80  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
CS  
t
20  
80  
20  
80  
0
CH  
t
AS  
t
AH  
t
DS  
t
DH  
5
Write Pulse Width  
t
60  
80  
WR  
NOTES:  
1
Full Scale Range (FSR) is 10V for unipolar mode.  
Guaranteed but not production tested.  
Digital input levels should not go below GND or exceed the positive supply voltage, otherwise damage may occur.  
See timing diagram.  
2
3
4
5
t
= 40ns minimum if t > 15ns (@T = 25°C)  
DH  
WR  
Specificationsare subject to change without notice  
ABSOLUTE MAXIMUM RATINGS (TA = +25°C unless otherwise noted)1, 2, 3  
VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 to +7 V  
VRFBA, VRFBB to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . +25 V  
Storage Temperature . . . . . . . . . . . . . . . . . –65°C to +150°C  
Lead Temperature (Soldering, 10 seconds) . . . . . . +300°C  
Package Power Dissipation Rating to 75°C  
AGND to DGND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1 V  
(Functionality Guaranteed +0.5 V)  
Digital Input Voltage to GND . . . . GND –0.5 to VDD +0.5 V  
IOUTA, IOUTB to GND . . . . . . . . . . . GND –0.5 to VDD +0.5 V  
VREFA, VREFB to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . +25 V  
PDIP, SOIC, PLCC . . . . . . . . . . . . . . . . . . . . . . . . 900mW  
Derates above 75°C . . . . . . . . . . . . . . . . . . . . . 12mW/°C  
NOTES:  
1
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a  
stress rating only and functional operation at or above this specification is not implied. Exposure to maximum rating  
conditions for extended periods may affect device reliability.  
2
3
Any input pin which can see a value outside the absolute maximum ratings should be protected by Schottky diode clamps  
(HP5082-2835) from input pin to the supplies. All inputs have protection diodes which will protect the device from short  
transients outside the supplies of less than 100mA for less than 100µs.  
GND refers to AGND and DGND.  
Rev. 2.00  
4