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BD35395FJ-M

BD35395FJ-M是适用于JEDEC标准DDR1/2/3/3L-SDRAM的终端稳压器。内置N-MOSFET,漏型/源型最大可提供1A电流的线性电源。内部的OP-AMP采用高速设计,实现了优异的瞬态响应特性。为驱动内部的N-MOSFET,需要3.3V或5.0V偏压电源。为确保JEDEC规定的电压精度,本产品拥有独立的基准输入引脚(VDDQ)和独立的反馈引脚(VTTS),实现了优异的输出电压精度和负载调整率。Power Supply Reference BoardFor Xilinx’s FPGA Spartan-7
驱动动态存储器双倍数据速率稳压器
0 ROHM

GRM1555C1H1R0WA01#

民用设备,工业设备,移动设备,植入式以外的医疗器械设备 [GHTF A/B/C],汽车[信息娱乐 / 舒适设备]
医疗医疗器械
0 MURATA

GRM0225C1C3R6CA03#

民用设备,工业设备,移动设备,植入式以外的医疗器械设备 [GHTF A/B/C],汽车[信息娱乐 / 舒适设备]
医疗医疗器械
0 MURATA

GJM0225C1C8R5DB01#

民用设备,工业设备,移动设备,植入式以外的医疗器械设备 [GHTF A/B/C],汽车[信息娱乐 / 舒适设备]
医疗医疗器械
0 MURATA

PMEG6030EP

60 V, 3 A low VF Schottky barrier rectifierProduction
功效光电二极管
0 NEXPERIA

ISP26DP06NMS

OptiMOS™ P-channel small signal MOSFETs 60V in SOT-223 package is the new technology targeted for consumer applications. The main advantage of a P-channel small signal device is the reduction of design complexity in medium and low power applications. Enabling fast switching, avalanche ruggedness and an easy interface to microcontroller unit (MCU), also featuring a very low on-resistance RDS(on). It is available in logic level.
暂无信息
0 INFINEON

BGT24LTR22

The BGT24LTR22 is a low power, low noise multichannel Silicon Germanium transceiver MMIC for 24GHz radar applications. It provides building blocks for analog signal generation and reception, operating in the frequency range from 24.0 GHz up to 24.25 GHz. The device supports multiple modulation schemes, including FMCW and Doppler. Integrated digital blocks controlling the chip are implemented to support radar system design.
暂无信息
0 INFINEON

GQM2195G2E3R6DB12#

民用设备,工业设备,移动设备,植入式以外的医疗器械设备 [GHTF A/B/C],汽车[信息娱乐 / 舒适设备]
医疗医疗器械
2 MURATA

SMLA12WBN7W

ROHM的贴片LED产品阵容中除了标准型产品外,还包括顶部发光贴片LED、侧发光贴片LED和支持背面贴装的贴片LED等丰富的产品。
暂无信息
1 ROHM

PSMN0R9-25YLD

N-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 TechnologyProduction
开关脉冲晶体管
0 NEXPERIA

GQM1555C2D1R6CB01#

民用设备,工业设备,移动设备,植入式以外的医疗器械设备 [GHTF A/B/C],汽车[信息娱乐 / 舒适设备]
医疗医疗器械
0 MURATA

74AUP1G58FHX

双输入、低功耗、通用可配置逻辑门
光电二极管逻辑集成电路触发器
0 ONSEMI

FDMA1025P

双 P 沟道,Power Trench® MOSFET,-20V,-3.1A,155mΩ
脉冲光电二极管晶体管
0 ONSEMI

GRM188R11H361JA01#

民用设备,工业设备,移动设备,植入式以外的医疗器械设备 [GHTF A/B/C],汽车[信息娱乐 / 舒适设备]
医疗医疗器械
0 MURATA

NTMJS1D15N03CGTWG

MOSFET, Power N Channel 30V LFPAK 
暂无信息
1 ONSEMI