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FP40R12KE3 参数 Datasheet PDF下载

FP40R12KE3图片预览
型号: FP40R12KE3
PDF下载: 下载PDF文件 查看货源
内容描述: IGBT模块 [IGBT-Modules]
分类和应用: 晶体晶体管双极性晶体管局域网
文件页数/大小: 11 页 / 201 K
品牌: EUPEC [ EUPEC GMBH ]
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Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FP40R12KE3  
Vorläufige Daten  
Preliminary data  
Modul Isolation/ Module Isolation  
Isolations-Prüfspannung  
insulation test voltage  
RMS, f = 50 Hz, t = 1 min.  
NTC connected to Baseplate  
VISOL  
2,5  
kV  
Elektrische Eigenschaften / Electrical properties  
Charakteristische Werte / Characteristic values  
min. typ. max.  
Diode Gleichrichter/ Diode Rectifier  
Durchlaßspannung  
forward voltage  
Tvj = 150°C,  
Tvj = 150°C  
Tvj = 150°C  
Tvj = 150°C,  
TC = 25°C  
IF =  
VF  
V(TO)  
rT  
40 A  
-
-
-
-
-
1,2  
-
0,8  
10,5  
-
V
Schleusenspannung  
threshold voltage  
-
V
Ersatzwiderstand  
slope resistance  
-
mW  
mA  
mW  
Sperrstrom  
reverse current  
VR  
=
IR  
1600 V  
2
Modul Leitungswiderstand, Anschlüsse-Chip  
lead resistance, terminals-chip  
RAA'+CC'  
5
-
min. typ. max.  
Transistor Wechselrichter/ Transistor Inverter  
VGE = 15V, Tvj = 25°C, IC =  
VGE = 15V, Tvj = 125°C, IC =  
VCE sat  
40 A  
40 A  
-
-
1,8  
2,3  
-
V
V
Kollektor-Emitter Sättigungsspannung  
collector-emitter saturation voltage  
2,15  
Gate-Schwellenspannung  
gate threshold voltage  
VCE = VGE  
,
Tvj = 25°C, IC =  
VGE(TO)  
Cies  
1,5 mA  
5,0  
5,8  
2,5  
-
6,5  
-
V
f = 1MHz, Tvj = 25°C  
VCE = 25 V, VGE = 0 V  
Eingangskapazität  
input capacitance  
-
-
-
nF  
mA  
nA  
Kollektor-Emitter Reststrom  
collector-emitter cut off current  
VGE = 0V, Tvj = 25°C, VCE  
=
ICES  
1200 V  
5
Gate-Emitter Reststrom  
gate-emitter leakage current  
VCE = 0V, VGE =20V, Tvj =25°C  
IC = INenn VCC  
IGES  
-
400  
,
=
=
=
=
=
=
=
=
=
=
=
=
=
=
600 V  
Einschaltverzögerungszeit (ind. Last)  
turn on delay time (inductive load)  
VGE = ±15V, Tvj = 25°C, RG  
VGE = ±15V, Tvj = 125°C, RG  
td,on  
27 Ohm  
27 Ohm  
600 V  
-
-
85  
90  
-
-
ns  
ns  
IC = INenn  
,
VCC  
Anstiegszeit (induktive Last)  
rise time (inductive load)  
VGE = ±15V, Tvj = 25°C, RG  
VGE = ±15V, Tvj = 125°C, RG  
tr  
27 Ohm  
27 Ohm  
600 V  
-
-
30  
45  
-
-
ns  
ns  
IC = INenn  
,
VCC  
Abschaltverzögerungszeit (ind. Last)  
turn off delay time (inductive load)  
VGE = ±15V, Tvj = 25°C, RG  
VGE = ±15V, Tvj = 125°C, RG  
td,off  
27 Ohm  
27 Ohm  
600 V  
-
-
420  
520  
-
-
ns  
ns  
IC = INenn  
,
VCC  
Fallzeit (induktive Last)  
fall time (inductive load)  
VGE = ±15V, Tvj = 25°C, RG  
VGE = ±15V, Tvj = 125°C, RG  
tf  
27 Ohm  
27 Ohm  
600 V  
-
-
65  
90  
-
-
ns  
ns  
IC = INenn  
VGE = ±15V, Tvj = 125°C, RG  
LS =  
,
VCC  
Einschaltverlustenergie pro Puls  
turn-on energy loss per pulse  
Eon  
Eoff  
ISC  
27 Ohm  
45 nH  
-
-
-
5,8  
4,9  
-
-
-
mWs  
mWs  
A
IC = INenn  
,
VCC  
=
=
600 V  
Abschaltverlustenergie pro Puls  
turn-off energy loss per pulse  
VGE = ±15V, Tvj = 125°C, RG  
27 Ohm  
45 nH  
LS =  
t
P £ 10µs,  
V
GE £ 15V, RG  
VCC  
=
=
27 Ohm  
720 V  
Kurzschlußverhalten  
SC Data  
Tvj£125°C,  
160  
2(11)  
DB-PIM-IGBT3_1.xls  
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