Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FP40R12KE3
Vorläufige Daten
Preliminary data
Modul Isolation/ Module Isolation
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
NTC connected to Baseplate
VISOL
2,5
kV
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
min. typ. max.
Diode Gleichrichter/ Diode Rectifier
Durchlaßspannung
forward voltage
Tvj = 150°C,
Tvj = 150°C
Tvj = 150°C
Tvj = 150°C,
TC = 25°C
IF =
VF
V(TO)
rT
40 A
-
-
-
-
-
1,2
-
0,8
10,5
-
V
Schleusenspannung
threshold voltage
-
V
Ersatzwiderstand
slope resistance
-
mW
mA
mW
Sperrstrom
reverse current
VR
=
IR
1600 V
2
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip
RAA'+CC'
5
-
min. typ. max.
Transistor Wechselrichter/ Transistor Inverter
VGE = 15V, Tvj = 25°C, IC =
VGE = 15V, Tvj = 125°C, IC =
VCE sat
40 A
40 A
-
-
1,8
2,3
-
V
V
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
2,15
Gate-Schwellenspannung
gate threshold voltage
VCE = VGE
,
Tvj = 25°C, IC =
VGE(TO)
Cies
1,5 mA
5,0
5,8
2,5
-
6,5
-
V
f = 1MHz, Tvj = 25°C
VCE = 25 V, VGE = 0 V
Eingangskapazität
input capacitance
-
-
-
nF
mA
nA
Kollektor-Emitter Reststrom
collector-emitter cut off current
VGE = 0V, Tvj = 25°C, VCE
=
ICES
1200 V
5
Gate-Emitter Reststrom
gate-emitter leakage current
VCE = 0V, VGE =20V, Tvj =25°C
IC = INenn VCC
IGES
-
400
,
=
=
=
=
=
=
=
=
=
=
=
=
=
=
600 V
Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
VGE = ±15V, Tvj = 25°C, RG
VGE = ±15V, Tvj = 125°C, RG
td,on
27 Ohm
27 Ohm
600 V
-
-
85
90
-
-
ns
ns
IC = INenn
,
VCC
Anstiegszeit (induktive Last)
rise time (inductive load)
VGE = ±15V, Tvj = 25°C, RG
VGE = ±15V, Tvj = 125°C, RG
tr
27 Ohm
27 Ohm
600 V
-
-
30
45
-
-
ns
ns
IC = INenn
,
VCC
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
VGE = ±15V, Tvj = 25°C, RG
VGE = ±15V, Tvj = 125°C, RG
td,off
27 Ohm
27 Ohm
600 V
-
-
420
520
-
-
ns
ns
IC = INenn
,
VCC
Fallzeit (induktive Last)
fall time (inductive load)
VGE = ±15V, Tvj = 25°C, RG
VGE = ±15V, Tvj = 125°C, RG
tf
27 Ohm
27 Ohm
600 V
-
-
65
90
-
-
ns
ns
IC = INenn
VGE = ±15V, Tvj = 125°C, RG
LS =
,
VCC
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
Eon
Eoff
ISC
27 Ohm
45 nH
-
-
-
5,8
4,9
-
-
-
mWs
mWs
A
IC = INenn
,
VCC
=
=
600 V
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
VGE = ±15V, Tvj = 125°C, RG
27 Ohm
45 nH
LS =
t
P £ 10µs,
V
GE £ 15V, RG
VCC
=
=
27 Ohm
720 V
Kurzschlußverhalten
SC Data
Tvj£125°C,
160
2(11)
DB-PIM-IGBT3_1.xls