Technische Information / technical information
IGBT-Module
IGBT-modules
FB20R06XE3
Vorläufige Daten
preliminary data
Diode-Wechselrichter / diode-inverter
Höchstzulässige Werte / maximum rated values
Periodische Spitzensperrspannung
repetitive peak reverse voltage
TÝÎ = 25°C
Vçç¢
600
20
V
A
A
Dauergleichstrom
DC forward current
IŒ
IŒç¢
I²t
Periodischer Spitzenstrom
t« = 1 ms
40
repetitive peak forward current
Grenzlastintegral
I²t - value
Vç = 0 V, t« = 10 ms, TÝÎ = 125°C
Vç = 0 V, t« = 10 ms, TÝÎ = 150°C
49,0
45,0
A²s
A²s
Charakteristische Werte / characteristic values
min. typ. max.
Durchlassspannung
forward voltage
IŒ = 20 A, V•Š = 0 V
IŒ = 20 A, V•Š = 0 V
IŒ = 20 A, V•Š = 0 V
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C
1,60 2,00
1,55
1,50
V
V
V
VŒ
Iç¢
QØ
Rückstromspitze
peak reverse recovery current
IŒ = 20 A, - diŒ/dt = 1800 A/µs (TÝÎ=150°C)
Vç = 300 V
V•Š = -15 V
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C
34,0
38,0
40,0
A
A
A
Sperrverzögerungsladung
recovered charge
IŒ = 20 A, - diŒ/dt = 1800 A/µs (TÝÎ=150°C)
Vç = 300 V
V•Š = -15 V
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C
1,00
1,75
2,20
µC
µC
µC
Abschaltenergie pro Puls
reverse recovery energy
IŒ = 20 A, - diŒ/dt = 1800 A/µs (TÝÎ=150°C)
Vç = 300 V
V•Š = -15 V
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C
0,21
0,37
0,47
mJ
mJ
mJ
EØþÊ
Innerer Wärmewiderstand
thermal resistance, junction to case
pro Diode
per diode
RÚÌœ†
RÚ̆™
2,65 2,95 K/W
0,80 K/W
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
pro Diode / per diode
/
ð«ÈÙÚþ = 1 W/(m·K)
ðÃØþÈÙþ = 1 W/(m·K)
prepared by: Daniel Kreuzer
approved by: Marc Buschkühle
date of publication: 2007-2-2
revision: 2.0
2
EUPEC [ EUPEC GMBH ]
