FLL600IQ-2C
L-Band High Power GaAs FET
Case Style "IQ"
2
1
0.1
(0.004)
3
2.0
(0.079)
4-R1.3±0.15
(0.051)
4
5
±0.2
2.4±0.13
(0.094)
6.0
(0.236)
16.4±0.2
(0.646)
4.4 Max.
1, 2: Gate
3: Source
4, 5: Drain
20.4±0.2
(0.803)
Unit: mm (inches)
24.0±0.2
(0.945)
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
CAUTION
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
FAX: (408) 428-9111
www.fcsi.fujitsu.com
• Do not put these products into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
FME, QDD (European Sales Office)
Fujitsu Microelectronics Europe GmbH
Quantum Devices Division
Network House
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 1999 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI1199M200
4
EUDYNA [ EUDYNA DEVICES INC ]
