FLL600IQ-2C
L-Band High Power GaAs FET
FEATURES
• Push-Pull Configuration
• High Power Output: 60W (Typ.)
• High PAE: 51% (Typ.)
• Broad Frequency Range: 2100 to 2200 MHz.
• Suitable for class AB operation.
DESCRIPTION
The FLL600IQ-2C is a 60 Watt GaAs FET that employs a push-pull design that
offers ease of matching, greater consistency and a broader bandwidth for high
power L-band amplifiers. This product is targeted to reduce the size and
complexity of highly linear, high power base station transmitting amplifiers.
This new product is uniquely suited for use in W-CDMA and IMT 2000 base
station amplifiers as it offers high gain, long term reliability and ease of use.
APPLICATIONS
• Solid State Base-Station Power Amplifier.
• W-CDMA and IMT 2000 Communication Systems.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
15
-5
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
V
V
V
V
DS
GS
Tc = 25°C
125
P
W
°C
°C
T
T
stg
-65 to +175
+175
T
ch
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (V ) should not exceed 12 volts.
DS
2. The forward and reverse gate currents should not exceed 117 and -35.4 mA respectively with
gate resistance of 10Ω.
3. The operating channel temperature (T ) should not exceed 145°C.
ch
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25°C)
Limits
Typ.
Item
Symbol
Conditions
Unit
Min.
Max.
V
V
I
= 5V, V = 0V
I
A
V
Drain Current
-
6
-
DS
GS
DSS
Pinch-Off Voltage
V
p
= 5V, I = 151mA -0.1
-0.3 -0.5
DS
DS
V
= -1.51mA
Gate-Source Breakdown Voltage
-5
-
-
-
V
dBm
dB
GSO
GS
P
Output Power
Linear Gain
47.0 48.0
out
V
DS
= 12V
11.0
GL
12.0
9
-
f = 2.17 GHz
= 1.5A
I
DS
-
-
-
13
-
A
Drain Current
I
DSR
Pin = 39dBm
η
51
%
Power-Added Efficiency
Thermal Resistance
CASE STYLE: IU
add
Channel to Case
0.8
1.2
°C/W
R
th
Edition 1.0
February 2000
1
EUDYNA [ EUDYNA DEVICES INC ]
