F0321818B
2 GHz Limiting Amplifier
♦ Noise Performance
The F0321818B based on the GaAs FET fabrication process intrinsically has more ex-
cellent low-noise characteristics compared with IC’s based on the silicon bipolar process.
Many transmission systems often demand superior signal-to-noise ratio; the F0321818B is
the best choice for such applications.
The differential circuit configuration in the input and output enable a complete differential
operation to reduce common mode noise: simple single ended input and output operation is
also available.
♦ LPF+ & LPF-
The F0321818B has two terminals, LPF+ and LPF-, for AC ground. These terminals are
connected to ground by a capacitor. The time constant of the feedback loop in the
F0321818B depends on the capacitor, giving the lower frequency cutoff of the circuit by the
large capacitor. A 0.1 micro farad is employed for conventional applications.
♦ Die-Chip Description
The F0321818B is shipped like the die-chip described above. The die thickness is typi-
cally 450 µm ± 20 µm with the available pad size uncovered by a passivation film of 95 µm
square. The material of the pads is TiW/Pt/Au and the backside is metalized by Ti/Au.
♦ Assembling Condition
SEI recommends the assembling process as shown below and affirms sufficient wire-
pull and die-shear strength. The heating time of one minutes at the temperature of 310 °C
gave satisfactory results for die-bonding with AuSn performs. The heating and ultrasonic
wire-bonding at the temperature of 150 °C by a ball-bonding machine is effective.
EUDYNA [ EUDYNA DEVICES INC ]
