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EM6AB080TSB-5G 参数 Datasheet PDF下载

EM6AB080TSB-5G图片预览
型号: EM6AB080TSB-5G
PDF下载: 下载PDF文件 查看货源
内容描述: [64M x 8 bit DDR Synchronous DRAM (SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 62 页 / 563 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EM6AB080  
EtronTech  
Table 15. D.C. Characteristics  
(VDD = 2.5V ± 0.2V, TA = 0~70 °C)  
Symbol  
-4  
-5  
Parameter & Test Condition  
Unit  
Max.  
OPERATING CURRENT:  
One bank; Active-Precharge; tRC=tRC(min); tCK=tCK(min); DQ,DM  
and DQS inputs changing once per clock cycle; Address and control  
inputs changing once every two clock cycles.  
IDD0  
85  
80  
mA  
OPERATING CURRENT:  
IDD1  
95  
5
90  
5
mA  
mA  
One bank; BL=4; reads - Refer to the following page for detailed test  
conditions  
PRECHARGE POWER-DOWN STANDBY CURRENT:  
All banks idle; power-down mode; tCK=tCK(min); CKE = LOW  
PRECHARGE FLOATING STANDBY CURRENT:  
IDD2P  
CS = HIGH; all banks idle; CKE = HIGH; tCK =tCK(min); address and  
other control inputs changing once per clock cycle; VIN = VREF for  
DQ, DQS and DM  
IDD2F  
40  
35  
mA  
PRECHARGE QUIET STANDBY CURRENT:  
CS =HIGH; all banks idle; CKE =HIGH; tCK=tCK(min) address and  
other control inputs stable at VIH(min) or VIL (max); VIN = VREF  
for DQ, DQS and DM  
IDD2Q  
IDD3P  
IDD3N  
40  
20  
65  
35  
20  
65  
mA  
mA  
mA  
ACTIVE POWER-DOWN STANDBY CURRENT : one bank active;  
power-down mode; CKE=LOW; tCK=tCK(min)  
ACTIVE STANDBY CURRENT :  
=HIGH;CKE=HIGH; one bank  
CS  
active ; tRC=tRC(max);tCK=tCK(min);Address and control inputs  
changing once per clock cycle; DQ,DQS,and DM inputs changing  
twice per clock cycle  
OPERATING CURRENT BURST READ : BL=2; READS;  
Continuous burst; one bank active; Address and control inputs  
changing once per clock cycle; tCK=tCK(min); lout=0mA;50% of data  
changing on every transfer  
IDD4R  
IDD4W  
150  
150  
130  
130  
mA  
mA  
OPERATING CURRENT BURST Write : BL=2; WRITES;  
Continuous Burst ;one bank active; address and control inputs  
changing once per clock cycle; tCK=tCK(min); DQ,DQS,and DM  
changing twice per clock cycle; 50% of data changing on every  
transfer  
AUTO REFRESH CURRENT : tRC=tRFC(min); tCK=tCK(min)  
IDD5  
IDD6  
160  
6
140  
6
mA  
mA  
SELF REFRESH CURRENT: Self Refresh Mode ; CKE  
0.2V;tCK=tCK(min)  
BURST OPERATING CURRENT 4 bank operation:  
Four bank interleaving READs; BL=4;with Auto Precharge;  
tRC=tRC(min); tCK=tCK(min); Address and control inputs change only  
during Active, READ , or WRITE command  
IDD7  
230  
210  
mA  
Etron Confidential  
11  
Rev.1.1  
Dec. /2013