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EM6AA160TSA-4G 参数 Datasheet PDF下载

EM6AA160TSA-4G图片预览
型号: EM6AA160TSA-4G
PDF下载: 下载PDF文件 查看货源
内容描述: 16M ×16位DDR同步DRAM ( SDRAM ) [16M x 16 bit DDR Synchronous DRAM (SDRAM)]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 54 页 / 431 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EtronTech  
EM6AA160TSA  
Table 18. SSTL _2 Interface  
Reference Level of Output Signals (VREF  
)
0.5 * VDDQ  
Output Load  
Reference to the Test Load  
VREF+0.35 V / VREF-0.35 V  
1 V/ns  
Input Signal Levels  
Input Signals Slew Rate  
Reference Level of Input Signals  
0.5 * VDDQ  
Figure 3. SSTL_2 A.C. Test Load  
0.5 x VDDQ  
50  
DQ, DQS  
Z0=50Ω  
30pF  
10) Power up Sequence  
Power up must be performed in the following sequence.  
1) Apply power to VDD before or at the same time as VDDQ, VTT and VREF when all input signals are held  
"NOP" state and maintain CKE “LOW”.  
2) Start clock and maintain stable condition for minimum 200µs.  
3) Issue a “NOP” command and keep CKE “HIGH”  
4) Issue a “Precharge All” command.  
5) Issue EMRS – enable DLL.  
6) Issue MRS – reset DLL. (An additional 200 clock cycles are required to lock the DLL).  
7) Precharge all banks of the device.  
8) Issue two or more Auto Refresh commands.  
9) Issue MRS – with A8 to low to initialize the mode register.  
Etron Confidential  
14  
Rev. 1.2  
May 2009