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EM6AA160BKC-4H 参数 Datasheet PDF下载

EM6AA160BKC-4H图片预览
型号: EM6AA160BKC-4H
PDF下载: 下载PDF文件 查看货源
内容描述: [16M x 16 bit DDR Synchronous DRAM (SDRAM)]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 63 页 / 481 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EtronTech  
EM6AA160  
Figure 39. Write without Auto Precharge  
tCK  
tCH tCL  
CK  
CK  
tIH  
tIS  
tIH  
CKE  
VALID  
NOP  
tIS tIH  
WRITE  
NOP  
NOP  
PRE  
NOP  
ACT  
RA  
NOP  
NOP  
NOP  
COMMAND  
A0-A8  
tIS tIH  
Col n  
A9,A11,A12  
A10  
RA  
RA  
BA  
tIS tIH  
ALL BANKS  
ONE BANKS  
DIS AP  
tIS tIH  
Bank X  
*Bank X  
BA0,BA1  
tRP  
Case 1:  
tDQSS=min  
tDSH  
tDQSH  
tDSH  
tDQSS  
tWR  
tWPST  
DQS  
tDQSL  
tWPRES  
tWPRE  
DI  
n
DQ  
DM  
tDSS  
tDQSH  
tDSS  
tWPST  
Case 2:  
tDQSS=max  
tDQSS  
DQS  
tWPRES  
tDQSL  
tWPRE  
DI  
n
DQ  
DM  
DI n = Data In from column n  
Burst Length = 4 in the case shown  
3 subsequent elements of Data In are provided in the programmed order following DI n  
DIS AP = Disable Autoprecharge  
*= Don't Care , if A10 is HIGH at this point  
PRE = PRECHARGE, ACT = ACTIVE, RA = Row Address, BA = Bank Address, AR = AUTOREFRESH  
NOP commands are shown for ease of illustration; other commands may be valid at these times  
Although tDQSS is drawn only for the first DQS rising edge, each rising edge of DQS must fall within the +  
25% window of the corresponding positive clock edge  
Precharge may not be issued before tRAS ns after the ACTIVE command for applicable banks  
Don’t Care  
Etron Confidential  
58  
Rev. 1.3  
Mar. /2014  
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