EtronTech
EM6A9320BI
4Mx32 DDR SDRAM
D.C. Characteristics
(VDD=2.5V 5% TA = 0~70 C)
±
°
4
5
6
Parameter & Test Condition
Symbol
Unit
Max
OPERATING CURRENT :
One bank; Active-Precharge; tRC=tRC(min); tCK=tCK(min)
OPERATING CURRENT :
IDD0
220 210 200 mA
260 240 240 mA
IDD1
One bank; Active-Read-Precharge; tRC≥tRC(min);
t
CK=tCK(min); lout=0mA;
PRECHARGE POWER-DOWN STANDBY CURRENT:
All banks idle; power-down mode; tCK=tCK(min);
CKE=LOW
IDD2P
75
75
75
mA
IDLE STANDLY CURRENT :
IDD2N 100 100 100 mA
CKE = HIGH; CS#=HIGH(DESELECT); All banks idle;
tCK=tCK(min)
ACTIVE POWER-DOWN STANDBY CURRENT :
IDD3P
75
75
75
mA
One bank active; power-down mode; CKE=LOW;
tCK=tCK(min)
ACTIVE STANDBY CURRENT :
CS#=HIGH;CKE=HIGH; one bank active ;
tRC=tRC(max);tCK=tCK(min)
IDD3N 230 220 220 mA
OPERATING CURRENT BURST MODE :
IDD4
IDD5
IDD6
IDD7
440 420 400 mA
330 300 300 mA
t
CK=tCK(min); lout=0mA
AUTO REFRESH CURRENT :
RC=tRFC(min); tCK=tCK(min)
t
SELF REFRESH CURRENT:
6
6
6
mA
Sell Refresh Mode ; CKE<=0.2V;tCK=tCK(min)
BURST OPERATING CURRENT 4 bank operation:
Four bank interleaving; BL=4; tRC=tRC(min); tCK=tCK(min)
600 570 550 mA
Note: These parameters depend on the cycle rate and these values are measured by the cycle rate
under the minimum value of tCK and tRC.
10
Rev 0.9C
May 2006
ETRON [ ETRON TECHNOLOGY, INC. ]
