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EM68C16CWQG-18IH 参数 Datasheet PDF下载

EM68C16CWQG-18IH图片预览
型号: EM68C16CWQG-18IH
PDF下载: 下载PDF文件 查看货源
内容描述: [64M x 16 bit DDRII Synchronous DRAM (SDRAM)]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 60 页 / 1276 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EtronTech  
EM68C16CWQG  
Figure 23. Burst read followed by burst write: RL=5, WL= (RL-1) =4, BL=4  
T0  
T1  
Tn-1  
Tn  
Tn+1  
Tn+2  
Tn+3  
Tn+4  
Tn+5  
CK#  
CK  
Post CAS#  
READ A  
Post CAS#  
WRITE A  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
CMD  
tRTW (Read to Write turn around time)  
DQS  
DQS#  
RL=5  
WL = RL-1 = 4  
Dout A0 Dout A1 Dout A2 Dout A3  
Din A0  
Din A1  
Din A2  
Din A3  
DQs  
NOTE : The minimum time from the burst read command to the burst write command is defined by a read-to-write-  
turn-around-time, which is 4 clocks in case of BL = 4 operation, 6 clocks in case of BL = 8 operation.  
Figure 24. Seamless burst read operation: RL=5, AL=2, CL=3, BL=4  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
CK#  
CK  
Post CAS#  
READ A  
Post CAS#  
READ B  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
CMD  
DQS  
DQS#  
AL=2  
CL=3  
RL=5  
Dout A0 Dout A1 Dout A2 Dout A3 Dout B0 Dout B1 Dout B2  
DQs  
NOTE : The seamless burst read operation is supported by enabling a read command at every other clock for BL =  
4 operation, and every 4 clock for BL =8 operation. This operation is allowed regardless of same or different banks  
as long as the banks are activated.  
Rev. 1.2  
42  
Apr. /2016  
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