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EM68C08CWAE-3H 参数 Datasheet PDF下载

EM68C08CWAE-3H图片预览
型号: EM68C08CWAE-3H
PDF下载: 下载PDF文件 查看货源
内容描述: [128M x 8 bit DDRII Synchronous DRAM (SDRAM)]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 63 页 / 512 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EtronTech  
EM68C08CWAE  
z Extended Mode Register Set (EMRS)  
EMR(1)  
The extended mode register(1) stores the data for enabling or disabling the DLL, output driver strength, ODT value  
selection and additive latency. The default value of the extended mode register is not defined, therefore the  
extended mode register must be written after power-up for proper operation. The extended mode register is written  
by asserting LOW on CS#, RAS#, CAS#, WE#, BA1 and HIGH on BA0, while controlling the states of address pins  
A0 ~ A13. The DDR2 SDRAM should be in all bank precharge with CKE already HIGH prior to writing into the  
extended mode register. The mode register set command cycle time (tMRD) must be satisfied to complete the write  
operation to the extended mode register. Mode register contents can be changed using the same command and  
clock cycle requirements during normal operation as long as all banks are in the precharge state. A0 is used for  
DLL enable or disable. A1 is used for enabling a half strength data-output driver. A3~A5 determine the additive  
latency, A2 and A6 are used for ODT value selection, A7~A9 are used for OCD control, A10 is used for DQS#  
disable and A11 is used for RDQS enable.  
- DLL Enable/Disable: The DLL must be enabled for normal operation. DLL enable is required during power up  
initialization, and upon returning to normal operation after having the DLL disabled. The DLL  
is automatically disabled when entering self refresh operation and is automatically re-enabled  
upon exit of self refresh operation. Any time the DLL is enabled (and subsequently reset),  
200 clock cycles must occur before a Read command can be issued to allow time for the  
internal clock to be synchronized with the external clock. Failing to wait for synchronization to  
occur may result in a violation of the tAC or tDQSCK parameters.  
Table 6-1. Extended Mode Register EMR (1) Bitmap  
BA2 BA1 BA0 A13 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 Address Field  
0*3  
0
1
0*3 Qoff  
OCD program Rtt  
Rtt  
RDQS  
DQS#  
Additive Latency  
D.I.C Extended Mode Register  
DLL  
BA1 BA0  
MRS mode  
MR  
A6 A2  
Rtt(NOMINAL)  
ODT Disable  
0
0
1
1
0
1
0
1
0
0
1
1
0
1
0
1
A0  
DLL Enable  
Enable  
Ω
EMR(1)  
EMR(2)  
EMR(3)  
75  
0
1
Disable  
Ω
150  
Ω
50  
A9  
0
A8  
0
A7 OCD Calibration Program  
Output Driver  
Impedance Control  
Full strength  
A1  
OCD Calibration mode exit; maintain setting  
Drive(1)  
0
1
0
0
1
0
0
0
1
0
1
Drive(0)  
Reduced strength  
1
0
Adjust mode*1  
1
1
OCD Calibration default*2  
A5 A4 A3  
Additive Latency  
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
0
A12  
0
Qoff *3  
1
Output buffer enabled  
Output buffer disabled  
2
A10  
DQS#  
1
3
0
1
Enable  
4
Disable  
A11  
0
RDQS Enable*4  
5
6
Disable  
Enable  
1
Reserved  
NOTE 1: When Adjust mode is issued, AL from previously set value must be applied.  
NOTE 2: After setting to default, OCD calibration mode needs to be exited by setting A9-A7 to 000.  
NOTE 3: Output disabled – DQs, DQSs, DQSs#.This feature is intended to be used during IDD characterization of read current.  
NOTE 4: If RDQS is enabled, the DM function is disabled. RDQS is active for reads and do not care for writes.  
Rev. 1.3  
10  
Oct. /2015  
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