EtronTech
Bank Activation / Row Address Command
EM68932DVKA
The Bank Activation / Row Address command, also called the Active command, is issued by holding
CAS
and
WE
High with
CS
and
RAS
Low at the rising edge of the clock (CK). The DDR SDRAM has four independent
banks, so two Bank Select Addresses (BA0, BA1) are required. The Active command must be applied before any
read or write operation is executed. The delay from the Active command to the first Read or Write command must
meet or exceed the minimum of
RAS
to
CAS
delay time (t
RCD
min). Once a bank has been activated, it must be
precharged before another Active command can be applied to the same bank. The minimum time interval between
interspersed Active commands (Bank 0 to Bank 3, for example) is the bank to bank delay time (t
RRD
min).
Burst Read Operation
Burst Read operation in a DDR SDRAM is initiated by asserting
CS
and
RAS
Low while holding
RAS
and
WE
High at the rising edge of the clock (CK) after tRCD from the Active command. The address inputs (A0~A7)
determine the starting address for the Burst. The Mode Register sets the type of burst (Sequential or Interleaved)
and the burst length (2, 4, or 8). The first output data is available after the
CAS
Latency from the Read command,
and the consecutive data bits are presented on the falling and rising edges of Data Strobe (DQS) as supplied by the
DDR SDRAM until the burst is completed.
Burst Write Operation
The Burst Write command is issued by having
CS
,
CAS
and
WE
Low while holding
RAS
High at the rising edge
of the clock (CK). The address inputs determine the starting column address. There is no write latency relative to
DQS required for the Burst Write cycle. The first data for a Burst Write cycle must be applied at the first rising edge
of the data strobe enabled after t
DQSS
from the rising edge of the clock when the Write command was issued. The
remaining data inputs must be supplied on each subsequent falling and rising edge of Data Strobe until the burst
length is completed. After the burst has finished, any additional data supplied to the DQ pins will be ignored.
Burst Interruption
Read Interrupted by Read
Burst Read can be interrupted before completion of the burst by a new Read command to any bank. When the
previous burst is interrupted, data bits from the remaining addresses are overridden by data from the new
addresses with the full burst length. The data from the previous Read command continues to appear on the outputs
until the
CAS
latency from the interrupting Read command is satisfied. At this point the data from the interrupting
Read command appears. The Read to Read interval is a minimum of 1 clock.
Read Interrupted by Burst Stop & Write
To interrupt Burst Read with a write command, the Burst Stop command must be asserted to avoid data contention
on the I/O bus by placing the DQ (output drivers) in a high impedance state. To ensure the DQ are tri-stated one
cycle before the beginning of the write operation, the Burst Stop command must be applied at least 2 clock cycles
for CL = 2 and at least 3 clock cycles for CL = 3 before the Write command.
Read Interrupted by Precharge
Burst Read can be interrupted by a Precharge of the same bank. A minimum of 1 clock cycle is required for the
read precharge interval. A Precharge command to output disable latency is equivalent to the
CAS
latency.
Write Interrupted by Write
A Burst Write can be interrupted by the new Write command before completion of the previous Burst Write, with the
only restriction being that the interval that separates the commands must be at least one clock cycle. When the
previous burst is interrupted, the remaining addresses are overridden by the new addresses and the new data will
be written into the device until the programmed Burst Length is satisfied.
Etron Confidential
10
Rev. 1.0
Mar. 2009
ETRON [ ETRON TECHNOLOGY, INC. ]
