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EM658160TS-6 参数 Datasheet PDF下载

EM658160TS-6图片预览
型号: EM658160TS-6
PDF下载: 下载PDF文件 查看货源
内容描述: 4M ×16的DDR同步DRAM (SDRAM)的 [4M x 16 DDR Synchronous DRAM (SDRAM)]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 26 页 / 158 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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Et r on Tech  
EM658160  
4Mx16 DDR SDRAM  
Mode Register Set (MRS)  
The mode register is divided into various fields depending on functionality.  
Burst Length Field (A2~A0)  
This field specifies the data length of column access using the A2~A0 pins and selects the  
Burst Length to be 2, 4, 8.  
A2  
0
A1  
0
A0  
0
Burst Length  
Reserved  
2
0
0
1
0
1
0
4
0
1
1
8
1
0
0
Reserved  
Reserved  
Reserved  
Reserved  
1
0
1
1
1
0
1
1
1
Addressing Mode Select Field (A3)  
The Addressing Mode can be one of two modes, both Interleave Mode or Sequential Mode.  
Both Sequential Mode and Interleave Mode support burst length of 2,4 and 8.  
A3  
0
Addressing Mode  
Sequential  
1
Interleave  
--- Addressing Sequence of Sequential Mode  
An internal column address is performed by increasing the address from the column  
address which is input to the device. The internal column address is varied by the Burst  
Length as shown in the following table.  
Data n  
0
n
1
2
3
4
5
6
7
n+1  
n+2  
n+3  
n+4  
n+5  
n+6  
n+7  
Column Address  
2 words  
4 words  
8 words  
Burst Length  
Full Page (Even starting address)  
--- Addressing Sequence of Interleave Mode  
A column access is started in the input column address and is performed by inverting the  
address bits in the sequence shown in the following table.  
Data n  
Data 0  
Data 1  
Data 2  
Data 3  
Data 4  
Data 5  
Data 6  
Data 7  
Column Address  
Burst Length  
A7 A6 A5 A4 A3 A2 A1 A0  
A7 A6 A5 A4 A3 A2 A1 A0#  
A7 A6 A5 A4 A3 A2 A1# A0  
A7 A6 A5 A4 A3 A2 A1# A0#  
A7 A6 A5 A4 A3 A2# A1 A0  
A7 A6 A5 A4 A3 A2# A1 A0#  
A7 A6 A5 A4 A3 A2# A1# A0  
A7 A6 A5 A4 A3 A2# A1# A0#  
4 words  
8 words  
Etron Confidential  
6
Rev. 1.1  
Jan. 2002  
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