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EM63A165TS-7G 参数 Datasheet PDF下载

EM63A165TS-7G图片预览
型号: EM63A165TS-7G
PDF下载: 下载PDF文件 查看货源
内容描述: 16Mega ×16同步DRAM (SDRAM)的 [16Mega x 16 Synchronous DRAM (SDRAM)]
分类和应用: 内存集成电路光电二极管动态存储器
文件页数/大小: 73 页 / 1390 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EtronTech
A2
0
0
0
0
1
1
1
1
Full Page Length : 512
A1
0
0
1
1
0
0
1
1
A0
0
1
0
1
0
1
0
1
Burst Length
1
2
4
8
Reserved
Reserved
Reserved
Full Page
EM63A165
Burst Length Field (A2~A0)
This field specifies the data length of column access using the A2~A0 pins and selects the Burst
Length to be 2, 4, 8, or full page.
Burst Type Field (A3)
The Burst Type can be one of two modes, Interleave Mode or Sequential Mode.
A3
0
1
Burst Type
Sequential
Interleave
--- Addressing Sequence of Sequential Mode
An internal column address is performed by increasing the address from the column address which is
input to the device. The internal column address is varied by the Burst Length as shown in the
following table. When the value of column address, (n + m), in the table is larger than 255, only the
least significant 8 bits are effective.
Data n
Column Address
0
n
1
n+1
2
n+2
3
n+3
4
n+4
5
n+5
6
n+6
7
n+7
-
-
255
n+255
256
n
257
n+1
-
-
2 words:
Burst Length
4 words:
8 words:
Full Page: Column address is repeated until terminated.
--- Addressing Sequence of Interleave Mode
A column access is started in the input column address and is performed by inverting the address bits
in the sequence shown in the following table.
Data n
Data 0 A8
A0
Data 1 A8
A0#
Data 2 A8
A0
Data 3 A8
A0#
Data 4 A8
A0
A7
A7
A7
A7
A7
A6
A6
A6
A6
A6
Column Address
A5
A5
A5
A5
A5
A4
A4
A4
A4
A4
A3
A3
A3
A3
A3
A2
A2
A2
A2
A2#
A1
A1
A1#
A1#
A1
8 words
4 words
Burst Length
13
Rev 1.1 Apr. 2007