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EM63A165TS-6G 参数 Datasheet PDF下载

EM63A165TS-6G图片预览
型号: EM63A165TS-6G
PDF下载: 下载PDF文件 查看货源
内容描述: 16Mega ×16同步DRAM (SDRAM)的 [16Mega x 16 Synchronous DRAM (SDRAM)]
分类和应用: 内存集成电路光电二极管动态存储器
文件页数/大小: 73 页 / 1390 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EtronTech  
EM63A165  
The BankPrecharge/PrechargeAll command that interrupts a write burst without the auto  
precharge function should be issued m cycles after the clock edge in which the last data-in element is  
registered, where m equals tWR/tCK rounded up to the next whole number. In addition, the DQM  
signals must be used to mask input data, starting with the clock edge following the last data-in  
element and ending with the clock edge on which the BankPrecharge/PrechargeAll command is  
entered (refer to the following figure).  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
CLK  
DQM  
t
RP  
COMMAND  
WRITE  
Precharge  
BANK (S)  
NOP  
NOP  
Activate  
ROW  
NOP  
NOP  
BANK  
COL n  
ADDRESS  
DQ  
t
WR  
DIN  
n
DIN  
n + 1  
: don't care  
Note: The DQMs can remain low in this example if the length of the write burst is 1 or 2.  
Write to Precharge  
7
Write and AutoPrecharge command (RAS# = "H", CAS# = "L", WE# = "L", BAs = Bank, A10 = "H",  
A0-A8 = Column Address)  
The Write and AutoPrecharge command performs the precharge operation automatically after  
the write operation. Once this command is given, any subsequent command can not occur within a  
time delay of {(burst length -1) + tWR + tRP(min.)}. At full-page burst, only the write operation is  
performed in this command and the auto precharge function is ignored.  
T0  
T 1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
CLK  
Bank A  
Activate  
Write A  
COMMAND  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
AutoPrecharge  
tDAL  
CAS# latency=2  
DIN A  
0
DIN A  
1
*
*
t
, DQ's  
CK2  
tDAL  
CAS# latency=3  
, DQ's  
DIN A  
0
DIN A  
1
t
CK3  
Begin AutoPrecharge  
Bank can be reactivatedat completion of tDAL  
tDAL= tWR + tRP  
*
Burst Write with Auto-Precharge  
(Burst Length = 2, CAS# Latency = 2, 3)  
8
Mode Register Set command (RAS# = "L", CAS# = "L", WE# = "L", A0-A12 = Register Data)  
The mode register stores the data for controlling the various operating modes of SDRAM. The  
Mode Register Set command programs the values of CAS# latency, Addressing Mode and Burst  
Length in the Mode register to make SDRAM useful for a variety of different applications. The default  
values of the Mode Register after power-up are undefined; therefore this command must be issued at  
the power-up sequence. The state of pins A0~A9 and A11 in the same cycle is the data written to the  
mode register. One clock cycle is required to complete the write in the mode register (refer to the  
following figure). The contents of the mode register can be changed using the same command and  
the clock cycle requirements during operation as long as all banks are in the idle state.  
11  
Rev 1.1 Apr. 2007  
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