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EM639165TS-75 参数 Datasheet PDF下载

EM639165TS-75图片预览
型号: EM639165TS-75
PDF下载: 下载PDF文件 查看货源
内容描述: 8Mega X 16位SDRAM [8Mega x 16bits SDRAM]
分类和应用: 动态存储器
文件页数/大小: 48 页 / 655 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EM639165  
MODE REGISTER  
POWER ON SEQUENCE  
Burst Length, Burst Type and /CAS Latency can be pro-  
grammed by setting the mode register (MRS). The mode  
register stores these data until the next MRS command,  
which may be issued when all banks are in idle state. After  
tRSC from a MRS command, the SDRAM is ready for new  
command.  
Before starting normal operation, the following power on  
sequence is necessary to prevent a SDRAM from damaged  
or malfunctioning.  
1. Apply power and start clock. Attempt to maintain CKE  
high, DQM high and NOP condition at the inputs.  
2. Maintain stable power, stable clock, and NOP input con-  
ditions for a minimum of 200µs.  
3. Issue precharge commands for all banks. (PRE or PREA)  
4. After all banks become idle state (after tRP), issue 8 or  
more auto-refresh commands.  
5. Issue a mode register set command to initialize the mode  
register.  
CLK  
/CS  
/RAS  
/CAS  
/WE  
After these sequence, the SDRAM is idle state and ready  
for normal operation.  
V
BA0,1 A11-A0  
BA0 BA1 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0  
0
0
0
0
0
0
0
LTMODE  
BT  
BL  
BL  
BT= 0  
BT= 1  
0 0 0  
0 0 1  
0 1 0  
0 1 1  
1 0 0  
1 0 1  
1 1 0  
1 1 1  
1
2
1
2
CL  
/CAS LATENCY  
4
4
BURST  
0 0 0  
0 0 1  
0 1 0  
0 1 1  
1 0 0  
1 0 1  
1 1 0  
1 1 1  
R
R
2
8
8
LENGTH  
R
R
R
FP  
R
R
R
R
LATENCY  
3
MODE  
R
R
R
R
BURST  
TYPE  
0
1
SEQUENTIAL  
INTERLEAVED  
R: Reserved for Future Use  
FP: Full Page  
Preliminary  
Rev 1.0 Feb. 2001  
13  
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