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EM638165TS-7IG 参数 Datasheet PDF下载

EM638165TS-7IG图片预览
型号: EM638165TS-7IG
PDF下载: 下载PDF文件 查看货源
内容描述: [4M x 16 bit Synchronous DRAM (SDRAM)]
分类和应用: 动态存储器光电二极管内存集成电路
文件页数/大小: 53 页 / 517 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EM638165  
EtronTech  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
CLK  
DQM  
NOP  
READ A  
NOP  
NOP  
NOP  
NOP  
WRITE B  
DIN B0  
NOP  
NOP  
COMMAND  
CAS# Latency=3  
DOUT A0  
DIN B1  
DIN B2  
t
CK3, DQ  
Must be Hi-Z before  
the Write Command  
Don’t Care  
Figure 8. Read to Write Interval  
(Burst Length  
4, CAS# Latency = 3)  
T6 T7 T8  
T0  
T1  
T2  
T3  
T4  
T5  
CLK  
DQM  
NOP  
NOP  
READ A  
NOP  
NOP  
WRITE B  
DIN B0  
NOP  
NOP  
NOP  
COMMAND  
CAS# Latency=2  
DIN B1  
DIN B2  
DIN B3  
t
CK2, DQ  
Must be Hi-Z before  
the Write Command  
Don’t Care  
Figure 9. Read to Write Interval  
(Burst Length 4, CAS# Latency = 2)  
A read burst without the auto precharge function may be interrupted by a BankPrecharge/ PrechargeAll  
command to the same bank. The following figure shows the optimum time that BankPrecharge/  
PrechargeAll command is issued in different CAS latency.  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
CLK  
Bank,  
Col A  
Bank  
Row  
Bank (s)  
ADDRESS  
tRP  
Precharge  
READ A  
NOP  
NOP  
NOP  
NOP  
NOP  
Activate  
NOP  
COMMAND  
CAS# Latency=2  
DOUT A0  
DOUT A1  
DOUT A0  
DOUT A2  
DOUT A1  
DOUT A3  
DOUT A2  
t
CK2, DQ  
CAS# Latency=3  
DOUT A3  
t
CK3, DQ  
Figure 10. Read to Precharge  
(CAS# Latency = 2, 3)  
5 Read and AutoPrecharge command  
(RAS# = "H", CAS# = "L", WE# = "H", BAs = Bank, A10 = "H", A0-A7 = Column Address)  
The Read and AutoPrecharge command automatically performs the precharge operation after the read  
operation. Once this command is given, any subsequent command cannot occur within a time delay of  
{tRP(min.) + burst length}. At full-page burst, only the read operation is performed in this command and the  
auto precharge function is ignored.  
Rev. 5.2  
9
Rev. 5.2  
Dec. /2013  
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