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EM638165TS-7IG 参数 Datasheet PDF下载

EM638165TS-7IG图片预览
型号: EM638165TS-7IG
PDF下载: 下载PDF文件 查看货源
内容描述: [4M x 16 bit Synchronous DRAM (SDRAM)]
分类和应用: 动态存储器光电二极管内存集成电路
文件页数/大小: 53 页 / 517 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EM638165  
EtronTech  
The BankPrecharge/PrechargeAll command that interrupts a write burst without the auto precharge function  
should be issued m cycles after the clock edge in which the last data-in element is registered, where m equals  
tWR/tCK rounded up to the next whole number. In addition, the DQM signals must be used to mask input data,  
starting with the clock edge following the last data-in element and ending with the clock edge on which the  
BankPrecharge/PrechargeAll command is entered (refer to the following figure).  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
CLK  
DQM  
tRP  
WRITE  
NOP  
NOP  
Precharge  
Bank (s)  
NOP  
NOP  
Activate  
NOP  
COMMAND  
ADDRESS  
DQ  
Bank  
Col n  
ROW  
tWR  
DIN  
n
DIN  
N+1  
Don’t Care  
Note: The LDQM/UDQM can remain low in this example if the length of the write burst is 1 or 2.  
Figure 14. Write to Precharge  
7
Write and AutoPrecharge command  
(RAS# = "H", CAS# = "L", WE# = "L", BAs = Bank, A10 = "H", A0-A7 = Column Address)  
The Write and AutoPrecharge command performs the precharge operation automatically after the write  
operation. Once this command is given, any subsequent command can not occur within a time delay of  
{(burst length -1) + tWR + tRP(min.)}. At full-page burst, only the write operation is performed in this  
command and the auto precharge function is ignored.  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
T9  
CLK  
Bank A  
Activate  
Bank A  
Activate  
WRITE A  
Auto Precharge  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
COMMAND  
tDAL  
DIN A0  
DIN A1  
DQ  
tDAL=tWR+tRP  
Begin AutoPrecharge  
Bank can be reactivated at  
completion of tDAL  
Figure 15. Burst Write with Auto-Precharge  
(Burst Length = 2)  
8
Mode Register Set command (RAS# = "L", CAS# = "L", WE# = "L", A0-A11 = Register Data)  
The mode register stores the data for controlling the various operating modes of SDRAM. The Mode  
Register Set command programs the values of CAS latency, Addressing Mode and Burst Length in the  
Mode register to make SDRAM useful for a variety of different applications. The default values of the  
Mode Register after power-up are undefined; therefore this command must be issued at the power-up  
sequence. The state of pins A0~A9 and A11 in the same cycle is the data written to the mode register.  
Two clock cycles are required to complete the write in the mode register (refer to the following figure).  
The contents of the mode register can be changed using the same command and the clock cycle  
requirements during operation as long as all banks are in the idle state.  
Rev. 5.2  
11  
Rev. 5.2  
Dec. /2013  
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