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EM638165TS-7IG 参数 Datasheet PDF下载

EM638165TS-7IG图片预览
型号: EM638165TS-7IG
PDF下载: 下载PDF文件 查看货源
内容描述: [4M x 16 bit Synchronous DRAM (SDRAM)]
分类和应用: 动态存储器光电二极管内存集成电路
文件页数/大小: 53 页 / 517 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EM638165  
EtronTech  
Figure 38. Full Page Write Cycle  
(Burst Length=Full Page)  
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22  
CLK  
CKE  
High  
CS#  
RAS#  
CAS#  
WE#  
BA0,1  
A10  
RBy  
RBy  
RAx  
RBx  
RBx  
A0-A9,  
A11  
RAx  
CAx  
CBx  
DQM  
DQ  
Data is ignored  
Hi-Z  
DAx  
DAx+1 DAx+2 DAx+3 DAx-1  
DAx  
DAx+1  
DBx  
DBx+1 DBx+2 DBx+3 DBx+4 DBx+5  
Activate  
Command  
Bank A  
Write  
Command  
Bank A  
Activate  
Command  
Bank B  
Write  
Command  
Bank B  
Precharge  
Command  
Bank B  
Activate  
Command  
Bank B  
The burst counter wraps  
from the highest order  
page address back to zero  
during this time interval  
Burst Stop  
Command  
Full Page burst operation does not  
Don’t Care  
terminate when the burst length is satisfied;  
the burst counter increments and continues  
bursting beginning with the starting address  
Rev. 5.2  
46  
Rev. 5.2  
Dec. /2013  
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