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EM638165TS-7IG 参数 Datasheet PDF下载

EM638165TS-7IG图片预览
型号: EM638165TS-7IG
PDF下载: 下载PDF文件 查看货源
内容描述: [4M x 16 bit Synchronous DRAM (SDRAM)]
分类和应用: 动态存储器光电二极管内存集成电路
文件页数/大小: 53 页 / 517 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EM638165  
EtronTech  
Pin Descriptions  
Table 3. Pin Details of EM638165  
Symbol  
Type  
Description  
CLK  
Input  
Clock: CLK is driven by the system clock. All SDRAM input signals are sampled  
on the positive edge of CLK. CLK also increments the internal burst counter and  
controls the output registers.  
CKE  
Input  
Clock Enable: CKE activates (HIGH) and deactivates (LOW) the CLK signal. If  
CKE goes low synchronously with clock (set-up and hold time same as other  
inputs), the internal clock is suspended from the next clock cycle and the state of  
output and burst address is frozen as long as the CKE remains low. When all  
banks are in the idle state, deactivating the clock controls the entry to the Power  
Down and Self Refresh modes. CKE is synchronous except after the device enters  
Power Down and Self Refresh modes, where CKE becomes asynchronous until  
exiting the same mode. The input buffers, including CLK, are disabled during  
Power Down and Self Refresh modes, providing low standby power.  
BA0,BA1  
Input  
Bank Activate: BA0, BA1 input select the bank for operation.  
BA1  
0
BA0  
0
Select Bank  
BANK #A  
BANK #B  
BANK #C  
BANK #D  
0
1
1
0
1
1
A0-A11  
Input  
Address Inputs: A0-A11 are sampled during the BankActivate command (row  
address A0-A11) and Read/Write command (column address A0-A7 with A10  
defining Auto Precharge) to select one location out of the 1M available in the  
respective bank. During a Precharge command, A10 is sampled to determine if all  
banks are to be precharged (A10 = HIGH). The address inputs also provide the  
op-code during a Mode Register Set command.  
CS#  
Input  
Input  
Chip Select: CS# enables (sampled LOW) and disables (sampled HIGH) the  
command decoder. All commands are masked when CS# is sampled HIGH. CS#  
provides for external bank selection on systems with multiple banks. It is  
considered part of the command code.  
RAS#  
Row Address Strobe: The RAS# signal defines the operation commands in  
conjunction with the CAS# and WE# signals and is latched at the positive edges of  
CLK. When RAS# and CS# are asserted "LOW" and CAS# is asserted "HIGH,"  
either the BankActivate command or the Precharge command is selected by the  
WE# signal. When the WE# is asserted "HIGH," the BankActivate command is  
selected and the bank designated by BA is turned on to the active state. When the  
WE# is asserted "LOW," the Precharge command is selected and the bank  
designated by BA is switched to the idle state after the precharge operation.  
CAS#  
WE#  
Input  
Input  
Column Address Strobe: The CAS# signal defines the operation commands in  
conjunction with the RAS# and WE# signals and is latched at the positive edges of  
CLK. When RAS# is held "HIGH" and CS# is asserted "LOW," the column access  
is started by asserting CAS# "LOW." Then, the Read or Write command is  
selected by asserting WE# "LOW" or "HIGH."  
Write Enable: The WE# signal defines the operation commands in conjunction  
with the RAS# and CAS# signals and is latched at the positive edges of CLK. The  
WE# input is used to select the BankActivate or Precharge command and Read or  
Write command.  
Rev. 5.2  
4
Rev. 5.2  
Dec. /2013  
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