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EM636327JT-10 参数 Datasheet PDF下载

EM636327JT-10图片预览
型号: EM636327JT-10
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×32高速同步图形DRAM ( SGRAM ) [512K x 32 High Speed Synchronous Graphics DRAM(SGRAM)]
分类和应用: 内存集成电路动态存储器时钟
文件页数/大小: 78 页 / 1387 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EtronTech  
EM636327  
first read data appears on the outputs (refer to the following figure). Once the Read command is  
registered, the data inputs will be ignored and writes will not be executed.  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
CLK  
NOP  
NOP  
NOP  
COMMAND  
NOP  
WRITE A  
READ B  
NOP  
NOP  
NOP  
CAS# latency=1  
DOUT B  
DOUT B  
DOUT B  
DOUT B  
DIN  
DIN  
A
0
2
3
0
1
t
, DQ's  
CK1  
CAS# latency=2  
, DQ's  
DOUT B  
DOUT B  
A
DOUT B  
DOUT B  
1
don't care  
don't care  
2
3
0
0
t
CK2  
CAS# latency=3  
, DQ's  
DOUT B  
DOUT B  
DOUT B  
DOUT B  
3
DIN  
A
don't care  
t
0
1
2
0
CK3  
Input data must be removed from the DQ's at least one clock  
cycle before the Read data appears on the outputs to avoid  
data contention.  
Input data for the write is masked.  
Write Interrupted by a Read  
(Burst Length = 4, CAS# Latency = 1, 2, 3)  
The BankPrecharge/PrechargeAll command that interrupts a write burst without the auto  
m
precharge function should be issued cycles after the clock edge in which the last data-in element  
m
is registered, where  
equals tWR/tCK rounded up to the next whole number. In addition, the DQM  
signals must be used to mask input data, starting with the clock edge following the last data-in  
element and ending with the clock edge on which the BankPrecharge/PrechargeAll command is  
entered (refer to the following figure).  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
CLK  
DQM  
t
RP  
COMMAND  
WRITE  
Precharge  
BANK (S)  
NOP  
NOP  
Activate  
ROW  
NOP  
NOP  
BANK  
COL n  
ADDRESS  
DQ  
t
WR  
DIN  
n
DIN  
n+1  
: don't care  
Note:  
The DQMs can remain low in this example if the length of the write burst is 1 or 2.  
Write to Precharge  
When the Burst-Read-Single-Write mode is selected, the write burst length is 1 regardless of  
the read burst length (refer to Figures 21 and 22 in Timing Waveforms).  
8
Block Write command  
(RAS# = "H", CAS# = "L", WE# = "L", DSF = "H", BS = Bank, A9 = "L", A3-A7 = Column Address,  
DQ0-DQ31 = Column Mask)  
The block writes are non-burst accesses that write to eight column locations simultaneously. A  
single data value, which was previously loaded in the Color register, is written to the block of eight  
consecutive column locations addressed by inputs A3~A7. The information on the DQs which are  
Preliminary  
1998  
December  
11