EtronTech
EM636165
1M x 16 SDRAM
Recommended D.C. Operating Conditions (VDD = 3.3V ± 0.3V, Ta = 0~70 C)
°
- 7L
- 5/55/6/7/8/10
Max.
Description/Test condition
Operating Current
Symbol
Unit Note
1 bank
operation
130/125/115/100/95/85
40
3
tRC ³ tRC(min), Outputs Open, Input
signal one transition per one cycle
IDD1
Precharge Standby Current in non-power down mode
3
3
115/110/90/85/75/60
15
0.8
0.8
tCK = tCK(min), CS# ³ VIH, CKE = VIH
IDD2N
IDD2P
Input signals are changed once during 30ns.
Precharge Standby Current in power down mode
tCK = tCK(min), CKE £ VIL(max)
2
2
Precharge Standby Current in power down mode
IDD2PS
,
tCK = ¥ CKE £ VIL(max)
mA
Active Standby Current in power down mode
CKE £ VIL(max), tCK = tCK(min)
Active Standby Current in non-power down mode
CKE ³ VIL(max), tCK = tCK(min)
Operating Current (Burst mode)
tCK=tCK(min), Outputs Open, Multi-bank interleave,gapless
data
2
1.5
20
40
3
IDD3P
IDD3N
105/100/90/80/70/55
165/160/150/140/130/115
3, 4
3
IDD4
Refresh Current
115/110/100/90/90 /80
2
40
IDD5
IDD6
tRC ³ tRC(min)
Self Refresh Current
VIH ³ VDD - 0.2, 0V £ VIL £ 0.2V
0.6
Parameter
Description
Min.
Max.
Unit Note
IIL
Input Leakage Current
( 0V £ VIN £ VDD, All other pins not under test = 0V )
- 10
10
mA
IOL
VOH
VOL
Output Leakage Current
Output disable, 0V £ VOUT £ VDDQ
- 10
2.4
-
10
-
mA
V
)
LVTTL Output "H" Level Voltage
( IOUT = -2mA )
LVTTL Output "L" Level Voltage
( IOUT = 2mA )
0.4
V
Preliminary
19
Rev. 2.7 Mar. 2006