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EM584161BC-70 参数 Datasheet PDF下载

EM584161BC-70图片预览
型号: EM584161BC-70
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ×16低功耗SRAM [256K x 16 Low Power SRAM]
分类和应用: 静态存储器
文件页数/大小: 13 页 / 250 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
 浏览型号EM584161BC-70的Datasheet PDF文件第5页浏览型号EM584161BC-70的Datasheet PDF文件第6页浏览型号EM584161BC-70的Datasheet PDF文件第7页浏览型号EM584161BC-70的Datasheet PDF文件第8页浏览型号EM584161BC-70的Datasheet PDF文件第9页浏览型号EM584161BC-70的Datasheet PDF文件第11页浏览型号EM584161BC-70的Datasheet PDF文件第12页浏览型号EM584161BC-70的Datasheet PDF文件第13页  
EtronTech  
EM584161  
Write Cycle4  
(UB#, LB# Controlled)(See Note 4)  
t
WC  
Address  
t
t
t
AS  
WP  
WR  
WE#  
CE1#  
CE2  
t
CW  
t
t
CW  
BW  
UB# LB#  
,
t
t
WHZ  
BLZ  
D
OUT  
t
LZ  
t
t
DS  
DH  
D
(See Note 5)  
VALID DATA IN  
IN  
Note:  
1. WE# remains HIGH for the read cycle.  
2. If CE1# goes LOW (or CE2 goes HIGH) with or after WE# goes LOW, the outputs will remain at high  
impedance.  
3. If CE1# goes HIGH (or CE2 goes LOW) coincident with or before WE# goes HIGH, the outputs will remain  
at high impedance.  
4. If OE# is HIGH during the write cycle, the outputs will remain at high impedance.  
5. Because I/O signals may be in the output state at this time, input signals of reverse polarity must not be  
applied.  
10  
Rev 2.0  
Nov. 2003