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EM565161BA-70E 参数 Datasheet PDF下载

EM565161BA-70E图片预览
型号: EM565161BA-70E
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×16的低功耗SRAM [512K x 16 Low Power SRAM]
分类和应用: 静态存储器
文件页数/大小: 13 页 / 792 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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Etr onTech
Read Cycle
EM565161
AC Characteristics and Operating Conditions (Ta = -40°C to 85°C, VDD = 2.3V to 3.6V)
EM565161
Symbol
tRC
tAA
tCO1
tCO2
tOE
tBA
tLZ
tOLZ
tBLZ
tHZ
tOHZ
tBHZ
tOH
Write Cycle
EM565161
Symbol
tWC
tWP
tCW
tBW
tAS
tWR
tWHZ
tOW
tDS
tDH
Write cycle time
Write pulse width
Chip Enable to end of write
Data Byte Control to end of Write
Address setup time
Write Recovery time
WE# Low to Output in High-Z
WE# High to Output in Low-Z
Data Setup Time
Data Hold Time
Parameter
55
45
45
45
0
0
5
25
0
-55
-70
Unit
20
ns
Min Max Min Max
20
70
55
60
60
0
0
5
30
0
Read cycle time
Address access time
Chip Enable (CE1#) Access Time
Chip Enable (CE2) Access Time
Output enable access time
Data Byte Control Access Time
Chip Enable Low to Output in Low-Z
Output enable Low to Output in Low-Z
Data Byte Control Low to Output in Low-Z
Chip Enable High to Output in High-Z
Output Enable High to Output in High-Z
Data Byte Control High to Output in High-Z
Output Data Hold Time
Parameter
55
10
5
10
10
-55
-70
Unit
70
70
70
35
70
25
25
25
ns
Min Max Min Max
55
55
55
25
55
20
20
20
70
10
5
10
10
AC Test Condition
Output load : 60pF + one TTL gate
Input pulse level : 0.4V, 2.4V
Timing measurements : 0.5 x V
DD
tR, tF : 5ns
Preliminary
5
Rev 0.9
Jan 2002