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EM565161BA-70E 参数 Datasheet PDF下载

EM565161BA-70E图片预览
型号: EM565161BA-70E
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×16的低功耗SRAM [512K x 16 Low Power SRAM]
分类和应用: 静态存储器
文件页数/大小: 13 页 / 792 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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Etr onTech
DC Recommended Operating Conditions (Ta=-40°C to 85°C)
Symbol
VDD
VIH
VIL
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Min
2.3
2.2
-0.3
(2)
EM565161
Typ
3.0
Max
3.6
VDD + 0.3
0.6
3.6
(1)
Unit
V
VDR
Data Retention Supply Voltage
Note:
(1) Overshoot : VDD +2.0V in case of pulse width
20ns
(2) Undershoot : -2.0V in case of pulse width
20ns
1.0
DC Characteristics (Ta = -40°C to 85°C, VDD = 2.3V to 3.6V)
Parameter
Input low current
Output low
voltage
Output high
voltage
Operating current
Symbol
IIL
VOL
VOH
IDD1
IDD2
Standby current
IDDS1
IIN = 0V to VDD
IOL = 2.1 mA
IOH = -1.0 mA
CE1# = VIL and
CE2 = VIH and
IOUT = 0mA
Other Input = VIH / VIL
CE1# = VIH or CE2 = VIL
CE1# = VDD – 0.2V or
IDDS2
UB# and LB# = VDD-0.2V or
CE2 = 0.2V
-70
2
25
-55
Cycle time = min
Test Conditions
Min
-1
VDD
0.15
Typ* Max Unit
12
2
1
0.4
35
mA
Cycle time = 1µs
5
0.3
35
µA
mA
µA
V
V
-55E/70E
Notes:
* Typical value are measured at T
a
= 25°C.
14
80
Capacitance (Ta = 25°C; f = 1 MHz)
Parameter
Input capacitance
Input/Output capacitance
Symbol
CIN
Min
Max
8
Unit
pF
pF
Test Conditions
VIN = GND
VIO = GND
CIO
10
Notes:
This parameter is periodically sampled and is not 100% tested.
Preliminary
4
Rev 0.9
Jan 2002