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MBT3906DW1T1 参数 Datasheet PDF下载

MBT3906DW1T1图片预览
型号: MBT3906DW1T1
PDF下载: 下载PDF文件 查看货源
内容描述: 双路通用晶体管 [Dual General Purpose Transistors]
分类和应用: 晶体晶体管
文件页数/大小: 10 页 / 720 K
品牌: ETL [ E-TECH ELECTRONICS LTD ]
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MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1  
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)  
Characteristic  
Symbol  
Min  
Max  
Unit  
Input Impedance  
h ie  
k Ω  
(V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)  
MBT3904DW1T1 (NPN)  
1.0  
2.0  
10  
12  
(V CE = –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) MBT3906DW1T1 (PNP)  
Voltage Feedback Ratio  
h re  
h fe  
h oe  
NF  
X 10 –4  
(V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)  
MBT3904DW1T1 (NPN)  
0.5  
0.1  
8.0  
10  
(V CE = –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) MBT3906DW1T1 (PNP)  
Small–Signal Current Gain  
(V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)  
MBT3904DW1T1 (NPN)  
100  
100  
400  
400  
(V CE = –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) MBT3906DW1T1 (PNP)  
Output Admittance  
µmhos  
dB  
(V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)  
MBT3904DW1T1 (NPN)  
1.0  
3.0  
40  
60  
(V CE = –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) MBT3906DW1T1 (PNP)  
Noise Figure  
(V CE = 5.0 Vdc, I C = 100 µAdc,  
R S = 1.0 k W, f = 1.0 kHz)  
MBT3904DW1T1 (NPN)  
5.0  
4.0  
(V CE = –5.0 Vdc, I C = –100 µAdc,  
R S = 1.0 k W, f = 1.0 kHz)  
MBT3906DW1T1 (PNP)  
SWITCHING CHARACTERISTICS  
Delay Time (V CC = 3.0 Vdc, V BE = –0.5 Vdc)  
(V CC = –3.0 Vdc, V BE = 0.5 Vdc)  
Rise Time (I C = 10 mAdc, I B1 = 1.0 mAdc)  
(I C = –10 mAdc, I B1 = –1.0 mAdc)  
MBT3904DW1T1 (NPN)  
MBT3906DW1T1 (PNP)  
MBT3904DW1T1 (NPN)  
MBT3906DW1T1 (PNP)  
t d  
t r  
t s  
t f  
35  
35  
ns  
ns  
ns  
ns  
35  
35  
Storage Time (V CC = 3.0 Vdc, I C = 10 mAdc) MBT3904DW1T1 (NPN)  
200  
225  
50  
(V CC = –3.0 Vdc, I C = –10 mAdc)  
Fall Time (I B1 = I B2 = 1.0 mAdc)  
(I B1 = I B2 = –1.0 mAdc)  
MBT3906DW1T1 (PNP)  
MBT3904DW1T1 (NPN)  
MBT3906DW1T1 (PNP)  
70  
MBT3904–3/12