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MBT3906DW1T1 参数 Datasheet PDF下载

MBT3906DW1T1图片预览
型号: MBT3906DW1T1
PDF下载: 下载PDF文件 查看货源
内容描述: 双路通用晶体管 [Dual General Purpose Transistors]
分类和应用: 晶体晶体管
文件页数/大小: 10 页 / 720 K
品牌: ETL [ E-TECH ELECTRONICS LTD ]
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MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)  
Characteristic  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage (2)  
Symbol  
Min  
Max  
Unit  
V (BR)CEO  
Vdc  
(I C = 1.0 mAdc, I B = 0)  
MBT3904DW1T1 (NPN)  
40  
(I C = –1.0 mAdc, I B = 0)  
Collector–Base Breakdown Voltage  
(I C = 10 µAdc, I E = 0)  
MBT3906DW1T1 (PNP)  
–40  
V (BR)CBO  
V (BR)EBO  
I BL  
Vdc  
Vdc  
MBT3904DW1T1 (NPN)  
MBT3906DW1T1 (PNP)  
60  
(I C = –10 µAdc, I E = 0)  
–40  
Emitter–Base Breakdown Voltage  
(I E = 10 µAdc, I C = 0)  
MBT3904DW1T1 (NPN)  
MBT3906DW1T1 (PNP)  
6.0  
(I E = –10 µAdc, I C = 0)  
–5.0  
Base Cutoff Current  
nAdc  
nAdc  
(V CE = 30 Vdc, V EB = 3.0 Vdc)  
MBT3904DW1T1 (NPN)  
50  
(V CE = –30 Vdc, V EB = –3.0 Vdc) MBT3906DW1T1 (PNP)  
Collector Cutoff Current  
–50  
I CEX  
(V CE = 30 Vdc, V EB = 3.0 Vdc)  
MBT3904DW1T1 (NPN)  
50  
(V CE = –30 Vdc, V EB = –3.0 Vdc) MBT3906DW1T1 (PNP)  
ON CHARACTERISTICS (2)  
–50  
DC Current Gain  
h FE  
Vdc  
(I C = 0.1 mAdc, V CE = 1.0 Vdc)  
(I C = 1.0 mAdc, V CE = 1.0 Vdc)  
(I C = 10 mAdc, V CE = 1.0 Vdc)  
(I C = 50 mAdc, V CE = 1.0 Vdc)  
(I C = 100 mAdc, V CE = 1.0 Vdc)  
(I C = –0.1 mAdc, V CE = –1.0 Vdc)  
(I C = –1.0 mAdc, V CE = –1.0 Vdc)  
(I C = –10 mAdc, V CE = –1.0 Vdc)  
(I C = –50 mAdc, V CE = –1.0 Vdc)  
(I C = –100 mAdc, V CE = –1.0 Vdc)  
Collector–Emitter Saturation Voltage  
(I C = 10 mAdc, I B = 1.0 mAdc)  
(I C = 50 mAdc, I B = 5.0 mAdc)  
(I C = –10 mAdc, I B = –1.0 mAdc)  
(I C = –50 mAdc, I B = –5.0 mAdc)  
Base–Emitter Saturation Voltage  
(I C = 10 mAdc, I B = 1.0 mAdc)  
(I C = 50 mAdc, I B = 5.0 mAdc)  
MBT3904DW1T1 (NPN)  
MBT3906DW1T1 (PNP)  
40  
70  
100  
60  
30  
60  
80  
100  
60  
30  
V CE(sat)  
Vdc  
Vdc  
MBT3904DW1T1 (NPN)  
MBT3906DW1T1 (PNP)  
0.2  
0.3  
– 0.25  
–0.4  
V BE(sat)  
MBT3904DW1T1 (NPN)  
0.65  
0.85  
0.95  
(I C = –10 mAdc, I B = –1.0 mAdc) MBT3906DW1T1 (PNP)  
(I C = –50 mAdc, I B = –5.0 mAdc)  
–0.65  
–0.85  
–0.95  
SMALL–SIGNAL CHARACTERISTICS  
Current–Gain — Bandwidth Product  
f T  
MHz  
(I C = 10 mAdc, V CE = 20 Vdc,  
f = 100 MHz)  
MBT3904DW1T1 (NPN)  
300  
250  
(I C = –10 mAdc, V CE = –20 Vdc,  
f = 100 MHz)  
MBT3906DW1T1 (PNP)  
Output Capacitance  
C obo  
pF  
pF  
(V CB = 5.0 Vdc, I E = 0, f = 1.0 MHz) MBT3904DW1T1 (NPN)  
4.0  
4.5  
(V CB = –5.0 Vdc, I E = 0,  
f = 1.0 MHz)  
MBT3906DW1T1 (PNP)  
Input Capacitance  
C ibo  
(V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz) MBT3904DW1T1 (NPN)  
(V EB = –0.5 Vdc, I C = 0, f = 1.0 MHz) MBT3906DW1T1 (PNP)  
2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.  
8.0  
10.0  
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MBT3904–2/12  
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