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7N60 参数 Datasheet PDF下载

7N60图片预览
型号: 7N60
PDF下载: 下载PDF文件 查看货源
内容描述: 7安培, 600Volts N沟道MOSFET [7 Amps,600Volts N-Channel MOSFET]
分类和应用:
文件页数/大小: 5 页 / 352 K
品牌: ESTEK [ Estek Electronics Co. Ltd ]
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7N60
Thermal Characteristics
Parameter
Thermal Resistance Junction-Ambient
Symbol
R
thJA
R
thCS
R
thJC
0.5
0.82
Ratings
TO-220
62.5
--
2.5
℃/W
TO-220F
Units
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance Junction-Case
Electrical Characteristics
(T
J
=25℃,unless Otherwise specified.)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Forward
BV
DSS
I
DSS
V
GS
=0V,I
D
=250µA
V
DS
=600V,V
GS
=0V
V
DS
=480V,T
C
=125℃
I
GSS
△BV
DSS
/△T
J
V
GS
=30V,V
DS
=0V
V
GS
=-30V,V
DS
=0V
I
D
=250µA
600
--
--
--
--
--
--
--
--
--
--
0.7
--
1
10
100
-100
--
V
µA
µA
nA
nA
V/℃
Symbol
Test Conditions
Min
Typ
Max
Units
Reverse
Current
Breakdown Voltage Temperature
Coefficient
On Characteristics
Gate Threshold Voltage
Static Drain-Source On-Resistance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Drain-Source Diode Forward Voltage
Continuous Drain-Source Current
Pulsed Drain-Source Current
Reverse Recovery Time
Reverse Recovery Charge
V
GS(TH)
R
DS(ON)
V
DS
=V
GS
, I
D
=250µA
V
DS
=10V,I
D
=3.5A
2.0
--
--
0.98
4.0
1.20
V
C
ISS
C
OSS
C
RSS
V
DS
=25V,V
GS
=0V,
f=1MH
Z
--
--
--
1000
110
12.6
--
--
--
pF
pF
pF
t
D(ON)
t
R
t
D(OFF)
t
F
Q
G
Q
GS
Q
GD
V
DS
=480V, I
D
=7.0A
V
GS
=10V
(Note 4, 5)
--
V
DD
=300V,I
D
=7.0A,
R
G
=25
(Note 4, 5)
20
50
80
70
29
4.7
12.5
--
--
--
--
--
--
--
ns
ns
ns
ns
nC
nC
nC
--
--
--
--
--
--
V
SD
I
SD
I
SM
t
RR
Q
RR
V
GS
=0V,I
SD
=7.0A
--
--
--
--
--
--
350
3.3
1.4
7.0
28.0
--
--
V
A
A
ns
µC
I
SD
=7.0A,
dI
SD
/dt=100A/µs
(Note 4)
--
--
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L =10 mH, I
AS
= 7.0 A, V
DD
= 50V, R
G
= 25
Ω,
Starting TJ = 25°C
3. I
SD
7.0 A, di/dt
200A/μs, V
DD
≤BV
DSS
, Starting TJ = 25°C
4. Pulse Test : Pulse width
≤300μs,
Duty cycle≤ 2%
5. Essentially independent of operating temperature
2
BEIJING ESTEK ELECTRONICS CO.,LTD