7N60
7 Amps,600Volts
,
N-Channel MOSFET
■
Description
The ET7N60 N-Channel enhancement mode silicon gate
power
MOSFET is designed for high voltage, high speed power switching
applications such as switching regulators, switching converters,
solenoid, motor drivers, relay drivers
.
■
Features
R
DS(ON)
= 1.20 @V
GS
= 10 V
Low gate charge ( typical 29nC)
High ruggedness
Fast switching capability
Avalanche energy specified
Improved dv/dt capability
■
Symbol
■
Absolute Maximum Ratings
(T
c
=25℃,unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Currenet Continuous
Drain Current Pulsed
Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation
Junction Temperature
Storage Temperature
*
Symbol
V
DSS
V
GSS
T
c
=25℃
T
c
=100℃
(Note 1)
I
DP
E
AR
E
AS
dv/dt
P
D
T
J
T
STG
152
1.21
I
D
Ratings
TO-220
600
±30
TO-220F
Units
V
V
7.0
4.3
28
15.2
267
4.5
7.0
4.3
28
*
A
A
A
mJ
mJ
V/ns
*
*
Repetitive
Single Pulse
(Note 1)
(Note 2)
(Note 3)
T
c
=25℃
Derate above 25℃
50
0.40
+150
W
W/℃
℃
℃
-55~+150
Drain current limited by maximum junction temperature.
1
BEIJING ESTEK ELECTRONICS CO.,LTD