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M52D32162A-7BG 参数 Datasheet PDF下载

M52D32162A-7BG图片预览
型号: M52D32162A-7BG
PDF下载: 下载PDF文件 查看货源
内容描述: 1米x 16Bit的X 2Banks手机同步DRAM [1M x 16Bit x 2Banks Mobile Synchronous DRAM]
分类和应用: 存储内存集成电路动态存储器手机
文件页数/大小: 32 页 / 808 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M52D32162A  
Self Refresh Entry & Exit Cycle  
0
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t
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C L O C K  
* N o t e 2  
* N o t e 4  
R F C m i n  
* N o t e 6  
* N o t e 1  
*Note3  
C K E  
t
S S  
* N o t e 5  
C S  
R A S  
C A S  
* N o t e 7  
A D D R  
B A  
A1 0/AP  
H i - Z  
H i - Z  
D Q  
W E  
D Q M  
S e l f R e f r e s h E x i t  
S e l f R e f r e s h E n t r y  
A u t o R e f r e s h  
:
D o n ' t c a r e  
*Note: TO ENTER SELF REFRESH MODE  
1. CS ,RAS & CAS with CKE should be low at the same clock cycle.  
2. After 1 clock cycle, all the inputs including the system clock can be don’t care except for CKE.  
3. The device remains in self refresh mode as long as CKE stays “Low”.  
cf.) Once the device enters self refresh mode, minimum tRAS is required before exit from self refresh.  
TO EXIT SELF REFRESH MODE  
4. System clock restart and be stable before returning CKE high.  
5. CS Starts from high.  
6. Minimum tRFC is required after CKE going high to complete self refresh exit.  
7. 4K cycles of burst auto refresh is required immediately before self refresh entry and immediately after self refresh  
exit.  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Jul. 2009  
Revision : 1.6 26/32  
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